相关论文: Surface Structuring of Patterned 4H-SiC Surfaces U…
An innovative technique, called conversion, is introduced to model circumferential cracks in thin cylindrical shells. The semi-analytical finite element method is applied to investigate the modal deformation of the cylinder. An element…
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal…
We designed and simulated freestanding dielectric optical metasurfaces based on arrays of etched nanoholes in a silicon membrane. We showed $2\pi$ phase control and high forward transmission at mid-infrared wavelengths by tuning the…
Thin Ge layers deposited on Si(105) form a stable single-domain film structure with large terraces and rebonded-step surface termination, thus realizing an extended and ordered Ge/Si planar hetero-junction. At the coverage of four Ge…
The study investigates the density, phase composition, microstructure and mechanical properties (microhardness, fracture toughness) of binderless WC + SiC and WC + SiC + C ceramics obtained by Spark Plasma Sintering (SPS). Nanopowders of…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
We study the high-velocity regime mode-I fracture instability when small microbranches start to appear near the main crack, using large scale simulations. Some of the features of those microbranches have been reproduced qualitatively in…
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface,…
In this paper crack initiation, propagation and branching phenomena are simulated using the Pseudo-Spring Smooth Particle Hydrodynamics (SPH) in two and three-dimensional domains. The pseudo-spring analogy is used to model material damage.…
Microstructure modifications induced by sliding a WC-Co indenter in scratch tests on the surface of a single phase AlCuFe icosahedral quasicrystal (IQC) was studied by scanning electron microscopy (SEM) and transmission electron microscopy…
To clarify the cause of the low channel conductivity at the SiO2/4H-SiC interface, the wavefunction at the SiC conduction band minimum was calculated using density functional theory under an applied electric field. We found that the…
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal of SiO2 or a different protective coat prior to MBE.…
We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled…
The shear strength of a pre-cracked sandwich layer is predicted, assuming that the layer is linear elastic or elastic-plastic, with yielding characterized by either J2 plasticity theory or by a strip-yield model. The substrates are elastic…
The atomic and electronic structures of a graphene layer on top of the $(2\times2)$ reconstruction of the SiC (000$\bar{1}$) surface are studied from ab initio calculations. At variance with the (0001) face, no C bufferlayer is found here.…
Exploiting elastic instability in thin films has proven a robust method for creating complex patterns and structures across a wide range of lengthscales. Even the simplest of systems, an elastic membrane with a lattice of pores, under…
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a…
Thermal annealing of Si/Si1-xSbx/Si amorphous thin film tri-layer samples (x=18 and 24 at%Sb) under 100 bar Ar pressure results in an interesting pattern formation. In pictures, taken by means of cross-sectional transmission electron…
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectroscopy. The graphene forms due to preferential sublimation…
Geometric frustration is a widespread phenomenon in physics, materials science, and biology, occurring when the geometry of a system prevents local interactions from being all accommodated. The resulting manifold of nearly degenerate…