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Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the identification of the transformed phases. Raman line as well…

材料科学 · 物理学 2008-07-14 C. R. Das , H. C. Hsu , S. Dhara , A. K. Bhaduri , B. Raj , L. C. Chen , K. H. Chen , S. K. Albert , A. Ray , Y. Tzeng

The spreading behaviour of cohesive sand powder is modelled by Discrete Element Method, and the spreadability and the mechanical jamming are focused. The empty patches and total particle volume of the spread layer are examined, followed by…

流体动力学 · 物理学 2025-02-27 Yulun Xu , Lanzhou Ge , Wenguang Nan

The majority of microfabricated ion traps in use for quantum information processing are of the 2D 'surface-electrode' type or of the 3D 'wafer' type. Surface-electrode traps greatly simplify fabrication and hold the promise of allowing…

量子物理 · 物理学 2022-06-01 A. Quinn , M. Brown , T. J. Gardner , D. T. C. Allcock

SiC is a promising substrate for Si-on-insulator (SOI) wafers for efficient thermal management owing to its high thermal conductivity and large bandgap. However, fabricating a Si device layer on a SiC substrate with a high and uniform…

材料科学 · 物理学 2024-06-26 Rulei Guo , Bin Xu , Fengwen Mu , Junichiro Shiomi

Recent experimental studies have shown that well-annealed, unstrained Si(105) surfaces appear disordered and atomically rough when imaged using scanning tunnelling microscopy (STM). We construct new models for the Si(105) surface that are…

凝聚态物理 · 物理学 2009-11-10 C. V. Ciobanu , V. B. Shenoy , C. Z. Wang , K. M. Ho

The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnelling microscopy (STM) and reflected high energy electron…

材料科学 · 物理学 2011-11-11 Larisa V. Arapkina , Vladimir M. Shevlyuga , Vladimir A. Yuryev

At vertical edges, thin films of silicon oxide (SiO_{2-x}) contain semiconductive c-Si layered nanocrystals (Si NC) embedded in and supported by an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables…

材料科学 · 物理学 2015-05-20 J. C. Phillips

Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger electron spectroscopy, scanning Auger microscopy and Raman…

材料科学 · 物理学 2015-05-13 Luxmi , P. J. Fisher , N. Srivastava , R. M. Feenstra , Yugang Sun , J. Kedzierski , P. Healey , Gong Gu

Nano--metal/semiconductor junction dependent porosification of silicon (Si) has been studied here. The silicon (Si) nanostructures (NS) have been textured on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced…

介观与纳米尺度物理 · 物理学 2017-05-09 Priyanka Yogi , Deepika Poonia , Suryakant Mishra , Shailendra K. Saxena , Swarup Roy , Pankaj R Sagdeo , Rajesh Kumar

Etched multilayers obtained by forming a laminar grating pattern within interferential multilayer mirrors are used in the soft x-ray range to improve the spectral resolution of wavelength dispersive spectrometers equipped with periodic…

仪器与探测器 · 物理学 2012-09-03 Philippe Jonnard , Karine Le Guen , Jean-Michel André , Jean-René Coudevylle , Nathalie Isac

We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality…

We demonstrate a mechanochemical approach to fabrication of a bidirectional surface on a doped silicon wafer. In the initial step of our fabrication procedure, a high-density polyethylene (HDPE) stylus is pressed and drawn on the Si…

材料科学 · 物理学 2017-11-21 Huihun Jung , Yusuf Nur , A. Kaan Kalkan , Melik C. Demirel

Titanium silicide is a key contact material in advanced three-dimensional semiconductor device architectures. Here, we examine the formation of ultrathin Ti-silicide on Si(100) using a combination of non-destructive in-situ and ex-situ ion…

An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of…

材料科学 · 物理学 2009-11-13 N. Camara , G. Rius , J. -R. Huntzinger , A. Tiberj , L. Magaud , N. Mestres , P. Godignon , J. Camassel

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former…

材料科学 · 物理学 2015-06-03 N. Srivastava , Guowei He , Luxmi , R. M. Feenstra

Crack-templated networks, metallic frameworks fabricated from crack patterns in sacrificial thin films, can exhibit high optical transmittance, high electric conductivity, and a host of other properties attractive for applications. Despite…

应用物理 · 物理学 2022-06-08 Jaeuk Kim , Thomas M. Truskett

Modeling folding surfaces with nonzero thickness is of practical interest for mechanical engineering. There are many existing approaches that account for material thickness in folding applications. We propose a new systematic and broadly…

计算几何 · 计算机科学 2016-01-22 Jason S. Ku , Erik D. Demaine

We present an ab initio study of the structural and electronic properties of styrene molecules adsorbed on the dimerized Si(100) surface at different coverages, ranging from the single-molecule to the full monolayer. The adsorption…

软凝聚态物质 · 物理学 2009-11-11 A. Calzolari , A. Ruini , M. J. Caldas , E. Molinari

We study a theoretical model of mud cracks, that is, the fracture patterns resulting from the contraction with drying in a thin layer of a mixture of granules and water. In this model, we consider the slip on the bottom of this layer and…

patt-sol · 物理学 2009-10-31 S. Kitsunezaki

Ultrafast laser irradiation can induce spontaneous self-organization of surfaces into dissipative structures with nanoscale reliefs. These surface patterns emerge from symmetry-breaking dynamical processes that occur in…