相关论文: New approach for the molecular beam epitaxy growth…

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric…

A three-step process was developed for growing high-quality, optically uniform WSe2 monolayers by molecular beam epitaxy (MBE) with advantage of using hexagonal boron nitride (hBN). The process was optimized to maximize the efficiency of…

Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…

Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature…

Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by…

We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…

Transition metal dichalcogenides (TMD) like MoSe$_2$ exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth PL is only achieved in micrometer-sized exfoliated TMD flakes…

Interests in two-dimensional transition-metal dichalcogenides have prompted some recent efforts to grow ultrathin layers of these materials epitaxially using molecular-beam epitaxy. However, growths of monolayer and bilayer WSe2, an…

We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2…

The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next generation optoelectronic devices, and fundamental physics…

To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy…

Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic…

PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with…

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer…

The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report…

Two-dimensional (2D) transition metal dichalcogenides MX2 (M = Mo, W, X = S, Se, Te) attracts enormous research interests in recent years. Its 2H phase possesses an indirect to direct bandgap transition in 2D limit, and thus shows great…

In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Although heterostructures of such materials can be conceived to…

The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion…

Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by…

Cr2Ge2Te6, a prototypical van der Waals ferromagnetic semiconductor, have attracted significant interest for its potential applications in high-performance spintronics. However, the magnetic ground state of monolayer Cr2Ge2Te6 remains…