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Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered…

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…

介观与纳米尺度物理 · 物理学 2015-05-14 Melinda Y. Han , Juliana C. Brant , Philip Kim

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

We numerically investigate the impact of boron nitride (BN) domains on the transport properties of graphene nanoribbons with lengths ranging from a few to several hundreds of nanometers and lateral size up to 4 nm. By varying the size and…

介观与纳米尺度物理 · 物理学 2012-10-29 Alejandro Lopez-Bezanilla , Stephan Roche

We examine the effect of a hexagonal boron nitride (hBN) substrate on electron transport through graphene nanojunctions just before gap formation. Junctions in vacuum and on hBN are formed using classical molecular dynamics to create…

介观与纳米尺度物理 · 物理学 2016-06-29 Hatef Sadeghi , Sara Sangtarash , Colin Lambert

We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2…

We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a…

介观与纳米尺度物理 · 物理学 2015-06-17 A. Epping , S. Engels , C. Volk , K. Watanabe , T. Taniguchi , S. Trellenkamp , C. Stampfer

We report on the fabrication and electrical characterization of both single layer graphene micron-sized devices and nanoribbons on a hexagonal boron nitride substrate. We show that the micron-sized devices have significantly higher mobility…

介观与纳米尺度物理 · 物理学 2013-02-06 Dominik Bischoff , Tobias Krähenmann , Susanne Dröscher , Michelle A. Gruner , Clément Barraud , Thomas Ihn , Klaus Ensslin

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a…

The atomically-precise controlled synthesis of graphene stripes embedded in hexagonal boron nitride opens up new possibilities for the construction of nanodevices with applications in sensing. Here, we explore properties related to…

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel…

介观与纳米尺度物理 · 物理学 2016-08-24 F. Chiappini , S. Wiedmann , M. Titov , A. K. Geim , R. V. Gorbachev , E. Khestanova , A. Mishchenko , K. S. Novoselov , J. C. Maan , U. Zeitler

We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as…

介观与纳米尺度物理 · 物理学 2009-07-09 Blanca Biel , François Triozon , X. Blase , Stephan Roche

Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a…

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…

介观与纳米尺度物理 · 物理学 2016-04-01 M. Gurram , S. Omar , S. Zihlmann , P. Makk , C. Schönenberger , B. J. van Wees

We examine the electronic structure of recently fabricated in-plane heterojunctions of zigzag graphene nanoribbons embedded in hexagonal boron nitride. We focus on hitherto unexplored interface configurations in which both edges of the…

介观与纳米尺度物理 · 物理学 2024-06-03 Michele Pizzochero , Nikita V. Tepliakov , Johannes Lischner , Arash A. Mostofi , Efthimios Kaxiras

We study the electron transport through a graphene nanoribbon-superconductor junction. Both zigzag and armchair edge graphene nanoribbons are considered, and the effects of the magnetic field and disorder on the transport property are…

介观与纳米尺度物理 · 物理学 2015-05-13 Qing-feng Sun , X. C. Xie

We present low-temperature magnetotransport measurements on graphene rings encapsulated in hexagonal boron nitride. We investigate phase-coherent transport and show Aharonov-Bohm (AB) oscillations in quasi-ballistic graphene rings with hard…

Electron transport in small graphene nanoribbons is studied by microwave emulation experiments and tight-binding calculations. In particular, it is investigated under which conditions a transport gap can be observed. Our experiments provide…

介观与纳米尺度物理 · 物理学 2017-01-18 Thomas Stegmann , John A. Franco-Villafañe , Ulrich Kuhl , Fabrice Mortessagne , Thomas H. Seligman

The presence of strong disorder in graphene nanoribbons yields low-mobility diffusive transport at high charge densities, whereas a transport gap occurs at low densities. Here, we investigate the longitudinal and transverse…

介观与纳米尺度物理 · 物理学 2012-09-03 Fabian Duerr , Jeroen B. Oostinga , Charles Gould , Laurens W. Molenkamp

Graphene/hexagonal boron nitride (G/$h$-BN) heterostructures offer an excellent platform for developing nanoelectronic devices and for exploring correlated states in graphene under modulation by a periodic superlattice potential. Here, we…

介观与纳米尺度物理 · 物理学 2018-03-14 Jiayu Li , Li Lin , Guang-Yao Huang , N. Kang , Jincan Zhang , Hailin Peng , Zhongfan Liu , H. Q. Xu
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