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相关论文: Semiconductor to metal transition for Ni doped CdO…

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For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It…

材料科学 · 物理学 2013-02-01 Amit K. Das , P. Misra , R. S. Ajimsha , A. Bose , S. C. Joshi , D. M. Phase , L. M. Kukreja

Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low…

材料科学 · 物理学 2016-10-28 Deepak Kumar Kaushik , K Uday Kumar , A. Subrahmanyam

Metal-insulator transition features as a transformation, from a highly charge conductive state to another state where charge conductivity is greatly suppressed when decreasing the temperature. Here we demonstrate two consecutive transitions…

强关联电子 · 物理学 2017-03-08 M. S. Saleem , C. Song , J. J. Peng , B. Cui , F. Li , Y. D. Gu , F. Pan

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical…

介观与纳米尺度物理 · 物理学 2016-06-15 Ting Chen , K. V. Reich , Nicolaas J. Kramer , Han Fu , Uwe R. Kortshagen , B. I. Shklovskii

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO),…

强关联电子 · 物理学 2020-07-27 Ravindra Singh Bisht , Gopi Nath Daptary , Aveek Bid , A. K. Raychaudhuri

We report on resistivity measurements in La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ and Nd$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films in order to elucidate the underlying mechanism for the CMR behavior. The experimental results are analyzed in terms of…

强关联电子 · 物理学 2007-05-23 V. N. Smolyaninova , X. C. Xie , F. C. Zhang , M. Rajeswari , R. L. Greene , S. Das Sarma

We start by analyzing experimental data of Spinelli [A. Spinelli, M. A. Torija, C. Liu, C. Jan, and C. Leighton, Phys. Rev. B 81, 155110 (2010)] for conductivity of $n$-type bulk crystals of SrTiO$_3$ (STO) with broad electron concentration…

材料科学 · 物理学 2021-06-10 Yi Huang , Y. Ayino , B. I. Shklovskii

The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are…

强关联电子 · 物理学 2009-11-11 XH Xu , AJ Behan , M Ziese , HJ Blythe , JR Neal , A Mokhtari , MR Ibrahim , AM Fox , GA Gehring

We investigate the transport properties of LixCoO2 thin films whose resistivities are nearly an order of magnitude lower than those of the bulk polycrystals. A metal-nonmetal transition occurs at ~0.8 in a biphasic domain, and the Seebeck…

强关联电子 · 物理学 2010-08-30 Y. Ishida , A. Mizutani , K. Sugiura , H. Ohta , K. Koumoto

We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome…

超导电性 · 物理学 2015-05-19 S. Finkelman , M. Sachs , J. Paglione , G. Droulers , P. Bach , R. L. Greene , Y. Dagan

Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001)…

强关联电子 · 物理学 2015-07-15 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction…

材料科学 · 物理学 2013-01-09 Sieu D. Ha , Gulgun H. Aydogdu , Shriram Ramanathan

This paper addresses the effect of disorder on the carrier transport mechanism of atomic layer deposited ZnO thin films as has been investigated by temperature dependent electrical resistivity measurements in the temperature range of 4.2K…

材料科学 · 物理学 2013-01-08 D. Saha , Amit. K. Das , R. S. Ajimsha , P. Misra , L. M. Kukreja

Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % have been grown by sequential pulsed laser deposition on sapphire substrates. The resistivity of the films first decreased from ~ 6.6x10-3 to 4.7x10-4 ohm-cm as the Si…

材料科学 · 物理学 2013-06-04 Amit K. Das , R. S. Ajimsha

Vanadium is a transition metal with multiple oxidation states and V2O5 is the most stable form among them. Besides catalysis, chemical sensing and photo-chromatic applications, V2O5 is also reported to exhibit a semiconductor to metal…

材料科学 · 物理学 2018-01-03 Raktima Basu , Sandip Dhara

The transverse magnetoresistance of thin films of the Diluted Magnetic Semiconductor Zn$_{1-x}$Co$_{x}$O:Al on glass was studied for temperatures in the range of 5 to 100 K. Measurements were made on thin films grown by rf magnetron…

介观与纳米尺度物理 · 物理学 2017-05-26 R. Martínez-Valdez , H. J. Jiménez-González , L. Angelats-Silva , M. Tomar

Disorder driven superconductor to insulator transition via intermediate metallic regime is reported in nano-crystalline thin films of molybdenum. The nano-structured thin films have been deposited at room temperature using DC magnetron…

Motivated by the ongoing interest in nitrides as materials for spintronics applications we have studied effects of doping with magnetic transition-metal elements (T=Cr,Mn,Fe,Co and Ni) on the electronic properties of semiconducting scandium…

材料科学 · 物理学 2020-09-23 Fares Benissad , Abdesalem Houari

Lowering the operating temperature of Solid Oxide Fuel Cells (SOFCs) is essential for improving durability and enabling large scale commercialization. Mixed ionic-electronic conductors (MIECs) of the Ruddlesden-Popper family, such as…

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer
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