相关论文: Temperature Dependence of Electrical Characteristi…
A new DC thermal model of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model is based on a number of fitting parameters depending on bias conditions by third order polynomials. The model includes three thermal…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…
We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC…
We report density-functional theory (DFT), atomistic simulations of the non-equilibrium transport properties of carbon nanotube (CNT) field-effect transistors (FETs). Results have been obtained within a self-consistent approach based on the…
We investigate quantum transport in aligned carbon nanotube (CNT) fibers fabricated via solution spinning, focusing on the roles of structural dimensionality and quantum interference effects. The fibers exhibit metallic behavior at high…
The Hall conductivity in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional organic conductors (TMTSF)$_2$X at a finite temperature is calculated. The temperature dependence of the Hall conductivity is…
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However,…
The performance of carbon nanotube (CNT) cables, a contender for copper-wire replacement, is tied to its metallic and semi-conducting-like conductivity responses with temperature; the origin of the semi-conducting-like response however is…
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive…
We present a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) including contact resistance, direct source-to-drain and band-to-band tunneling currents. The model captures the effects of dimensional…
Carbon nanotubes (CNTs) have recently attracted attention as materials for flexible thermoelectric devices. To provide theoretical guideline of how defects influence the thermoelectric performance of CNTs, we theoretically studied the…
We investigate the thermal conductivity of four types of deformed carbon nanotubes by using the nonequilibrium molecular dynamics method. It is reported that various deformations have different influence on the thermal properties of carbon…
We presents a data-calibrated compact model of carbon nanotube (CNT) field-effect transistors (CNFETs) based on the virtual-source (VS) approach, describing the intrinsic current-voltage and charge-voltage characteristics. The features of…
In this study, a model of a Schottky-barrier carbon nanotube field- effect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and…
We report here on electrical measurements on individual multi-walled carbon nanotubes (MWNTs) that show that the presence or movement of impurities or defects in the carbon nanotube can radically change its low temperature transport…
One of the characteristics of disordered semiconductors is the slow thermalization of charge carriers after excitation due to photoabsorption or high electric fields. An elegant way to capture the effects of the latter on the conductivity…
The universal features of quantized thermal conductance of carbon nanotubes (CNTs) are revealed through theoretical analysis based on the Landauer theory of heat transport. The phonon-derived thermal conductance of semiconducting CNTs…
We discuss the temperature dependence of the Hall conductivity $\sigma_{xy}$ in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional Bechgaard salts (TMTSF)_2X. Electronic thermal excitations across the…