相关论文: Luminescence imaging of photoelectron spin precess…
Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different…
The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions…
We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is…
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion…
We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with up to 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…
We find that photoexcited electrons in an n-GaAs epilayer rapidly (< 50 ps) spin-polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin…
We present a detailed experimental and theoretical analysis of the optical orientation of electron spins in GaAs/AlAs quantum wells. Using time and polarization resolved photoluminescence excitation spectroscopy, the initial degree of…
We have studied polariton spin dynamics in a GaAs/AlGaAs microcavity by means of polarization- and time-resolved photoluminescence spectroscopy as a function of excitation density and normal mode splitting. The experiments reveal a novel…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation…
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created…
We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This was done by exciting the nanowire by tightly-focussed…
Pulsed electrically-detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B > 8.5 T) and low temperatures (T = 2.8 K) is presented. We find that the spin-dependent capture and reemission…
Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant…
Modern electronic devices utilize charge to transmit and store information. This leaves the information susceptible to external influences, such as radiation, that can introduce short timescale charge fluctuations and, long term, degrade…
We show by spatially and time-resolved photoluminescence that the application of an electric field transverse to the plane of an intrinsic GaAs (111) quantum well (QW) allows the transport of photogenerated electron spins polarized along…
We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…
External driving of spinor degrees of freedom by magnetic or optical fields in quantum systems underpin many applications ranging from nuclear magnetic resonance to coherent state control in quantum computing. Although spinor polariton…