相关论文: Non-ideal memristors for a non-ideal world
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is…
We investigate theoretically the V-I characteristics and voltage noise of superconducting tunnel junctions with small critical current via the matrix-continued-fraction method. Special attention is paid to the large hysteresis in the V-I…
This paper shows that pinched hysteresis can be observed in simple nonlinear resonance circuits containing a single diode that behaves as a voltage-controlled switch. Mathematical models are derived and numerically validated for both series…
Memristive devices have revolutionized non-volatile memory and neuromorphic computing, yet the geometry of their hysteresis loops -- in particular, the occurrence and robustness of multiple self-crossings -- remains poorly understood. Here…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
Memristors, uniquely characterized by their pinched hysteresis loop fingerprints, have attracted significant research interest over the past decade, due to their enormous potential for novel computation and artificial intelligence…
We introduce a mathematical framework for the analysis of the input-output dynamics of externally driven memristors. We show that, under general assumptions, their dynamics comply with a Bernoulli differential equation and hence can be…
A number of improvements have been added to the existing analytical model of hysteresis loop defined in parametric form. In particular, three phase shifts are included in the model, which permits to tilt the hysteresis loop smoothly by the…
We investigate the Fourier transform of the current through a memristor when the applied-voltage frequency is smaller than the characteristic memristor frequency, and the memristor shows hysteresis in the current-voltage plane. We find that…
It has been erroneously asserted by the circuit theorist Leon Chua that all zero-crossing pinched hysteresis curves define memristors. This claim has been used by Stan Williams of HPLabs to assert that all forms of RRAM and phase change…
Recent years have seen a rapid rise of artificial neural networks being employed in a number of cognitive tasks. The ever-increasing computing requirements of these structures have contributed to a desire for novel technologies and…
An electron nematic is a translationally invariant state which spontaneously breaks the discrete rotational symmetry of a host crystal. In a clean square lattice, the electron nematic has two preferred orientations, while dopant disorder…
Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the…
There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli…
The behaviour of the Random Anisotropy Ising model at T=0 under local relaxation dynamics is studied. The model includes a dominant ferromagnetic interaction and assumes an infinite anisotropy at each site along local anisotropy axes which…
We discuss the memristive fingerprints of the hybrid Cassie-Mayr model of electric arcs. In particular, it is shown that (i) the voltage-current characteristic of the model has the pinched hysteresis nature, (ii) the voltage and current…
We study the dynamics of a viscoelastic medium driven through quenched disorder by expanding about mean field theory in $6-\epsilon$ dimensions. The model exhibits a critical point separating a region where the dynamics is hysteretic with a…
We present numerical simulations of avalanches and critical phenomena associated with hysteresis loops, modeled using the zero-temperature random-field Ising model. We study the transition between smooth hysteresis loops and loops with a…
Experimental systems with a first order phase transition will often exhibit hysteresis when out of equilibrium. If defects are present, the hysteresis loop can have different shapes: with small disorder the hysteresis loop has a macroscopic…
The hysteresis loop in the zero-temperature random-field Ising model exhibits a critical point as the width of the disorder increases. Above six dimensions, the critical exponents of this transition, where the "infinite avalanche" first…