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Hexagonal Boron Nitride substrates have been shown to dramatically improve the electric properties of graphene. Recently, it has been observed that when the two honeycomb crystals are close to perfect alignment, strong lattice distortions…

介观与纳米尺度物理 · 物理学 2014-10-08 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers.…

介观与纳米尺度物理 · 物理学 2021-01-04 Yongping Du , Ning Xu , Xianqing Lin , Antti-Pekka Jauho

Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can…

介观与纳米尺度物理 · 物理学 2018-12-03 Zahra Khatibi , Afshin Namiranian , S. F. K. S. Panahi

We study the effect of atomic relaxation on the structure of moir\'e patterns in twisted graphene on graphite and double layer graphene by large scale atomistic simulations. The reconstructed structure can be described as a superlattice of…

介观与纳米尺度物理 · 物理学 2015-10-20 M. M. van Wijk , A. Schuring , M. I. Katsnelson , A. Fasolino

We theoretically investigate the electronic structures of moir\'{e} superlattices arising in monolayer / bilayer graphene stacked on hexagonal boron nitride (hBN) in presence and absence of magnetic field. We develop an effective continuum…

介观与纳米尺度物理 · 物理学 2014-10-10 Pilkyung Moon , Mikito Koshino

We study the structural relaxation and electronic properties of a one-dimensional (1D) moir\'e system composed of a zigzag graphene nanoribbon (GNR) placed on a hexagonal boron nitride (hBN) substrate. Using an effective grid model derived…

介观与纳米尺度物理 · 物理学 2026-03-24 Ryosuke Okumura , Naoto Nakatsuji , Takuto Kawakami , Mikito Koshino

We calculate the electronic structure in quasiperiodic double-moir\'e systems of graphene sandwiched by hexagonal boron nitride, and identify the topological invariants of energy gaps. We find that the electronic spectrum contains a number…

介观与纳米尺度物理 · 物理学 2021-08-04 Hiroki Oka , Mikito Koshino

Recent progress in preparing well controlled 2D van der Waals heterojunctions has opened up a new frontier in materials physics. In this paper we address the intriguing energy gaps that are sometimes observed when a graphene sheet is placed…

介观与纳米尺度物理 · 物理学 2015-02-23 Jeil Jung , Ashley DaSilva , Allan H. MacDonald , Shaffique Adam

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , P. Kosinski , Z. Klusek

The structural similarity between hexagonal boron nitride (h-BN) and graphene nanoribbons allows for the formation of heterojunctions with small chain stress. The combination of the insulation nature of the former and the quasi-metallic…

Hexagonal boron nitride is an ideal dielectric to form two-dimensional heterostructures due to the fact that it can be exfoliated to be just few atoms thick and its a very low density of defects. By placing graphene nanoribbons on high…

介观与纳米尺度物理 · 物理学 2018-11-28 Yohanes S. Gani , D. S. L. Abergel , Enrico Rossi

A periodic spatial modulation, as created by a moir\'e pattern, has been extensively studied with the view to engineer and tune the properties of graphene. Graphene encapsulated by hexagonal boron nitride (hBN) when slightly misaligned with…

介观与纳米尺度物理 · 物理学 2020-01-31 M. Anđelković , S. P. Milovanović , L. Covaci , F. M. Peeters

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body…

The interaction between a graphene layer and a hexagonal Boron Nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an…

介观与纳米尺度物理 · 物理学 2014-09-05 Pablo San-Jose , Ángel Gutiérrez , Mauricio Sturla , Francisco Guinea

The effect of an hexagonal boron nitride (hBN) layer close aligned with twisted bilayer graphene (TBG) is studied. At sufficiently low angles between twisted bilayer graphene and hBN, $\theta_{hBN} \lesssim 2^\circ$, the graphene electronic…

强关联电子 · 物理学 2020-10-28 Tommaso Cea , Pierre A. Pantaleon , Francisco Guinea

We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the…

材料科学 · 物理学 2010-11-10 J. Slawinska , I. Zasada , Z. Klusek

We investigate the electronic and optical properties of lateral heterostructures made of alternated armchair ribbons of graphene and hexagonal boron nitride. It is known that the gapwidth of these heterostructures can be classified into…

材料科学 · 物理学 2026-01-22 Elisa Serrano Richaud , Sylvain Latil , Lorenzo Sponza

All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moir\'e patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a…

介观与纳米尺度物理 · 物理学 2015-06-18 Ashley M. DaSilva , Jeil Jung , Shaffique Adam , Allan H. MacDonald

Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes…

We investigate the adsorption of graphene sheets on h-BN substrates by means of first-principles calculations in the framework of adiabatic connection fluctuation-dissipation theory in the random phase approximation. We obtain adhesion…

介观与纳米尺度物理 · 物理学 2011-12-14 B. Sachs , T. O. Wehling , M. I. Katsnelson , A. I. Lichtenstein
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