中文
相关论文

相关论文: Localized in-gap state in a single electron doped …

200 篇论文

In the absence of a confining potential, the boson Hubbard model in its ground state is known to exhibit a superfluid to Mott insulator quantum phase transition at commensurate fillings and strong on-site repulsion. In this paper, we use…

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

Using dynamical-mean-field theory for clusters, we study the two-dimensional Hubbard model in which electrons are coupled with the orthorhombic lattice distortions through the modulation in the hopping matrix. Instability towards…

强关联电子 · 物理学 2015-06-05 Satoshi Okamoto , Nobuo Furukawa

The one dimensional Bose-Hubbard model at a unit filling factor is studied by means of a very high order symbolic perturbative expansion. Analytical expressions are derived for the ground state quantities such as energy per site, variance…

其他凝聚态物理 · 物理学 2009-11-11 Bogdan Damski , Jakub Zakrzewski

We consider the extended Hubbard model on a two-dimensional square lattice at half-filling. The model is investigated using the strong coupling diagram technique. We sum infinite series of ladder diagrams allowing for full-scale charge and…

强关联电子 · 物理学 2023-05-22 A. Sherman

The ionic Hubbard model on a cubic lattice is investigated using analytical approximations and Wilson's renormalization group for the charge excitation spectrum. Near the Mott insulating regime, where the Hubbard repulsion starts to…

强关联电子 · 物理学 2009-11-11 Torben Jabben , Norbert Grewe , Frithjof Anders

Electronic structure has been studied in lightly electron doped correlated spin-orbit insulator Sr$_2$IrO$_4$ by angle-resolved photoelectron spectroscopy. We have observed coexistence of the lower Hubbard band and the in-gap band, the…

Mott insulators form because of strong electron repulsions, being at the heart of strongly correlated electron physics. Conventionally these are understood as classical "traffic jams" of electrons described by a short-ranged entangled…

高能物理 - 理论 · 物理学 2018-08-03 Tomas Andrade , Alexander Krikun , Koenraad Schalm , Jan Zaanen

The numerically exact diagonalization study on small clusters of the t-J model with the second- and third- neighbor hopping terms shows that a novel spin liquid state is realized around a doped hole with momentum k=(pi,0) and energy \sim 2J…

强关联电子 · 物理学 2009-10-31 T. Tohyama , Y. Shibata , S. Maekawa , Z. -X. Shen , N. Nagaosa , L. L. Miller

Using mean-field theory, we investigate the ground state properties of ultracold bosons loaded in a honeycomb lattice with on-site repulsive interactions and imbalanced nearest-neighbor hopping amplitudes. Taking into account correlations…

量子气体 · 物理学 2014-06-24 Krzysztof Gawryluk , Christian Miniatura , Benoît Grémaud

The Mott insulating phase of the parent compounds is frequently taken as starting point for the underdoped high-$T_c$ cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In…

强关联电子 · 物理学 2020-07-21 Wei Wu , Mathias S. Scheurer , Michel Ferrero , Antoine Georges

Recently, a quantum anomalous Hall state at odd integer filling in moir\'e stacked MoTe$_2$/WSe$_2$ was convincingly interpreted as a topological Mott insulator state appearing due to strong interactions in {\it band} basis [P. Mai, J.…

The issues of single particle coherence and its interplay with singlet pairing are studied within the slave boson gauge theory of a doped Mott insulator. Prior work by one of us (T. Senthil, arXiv:0804.1555) showed that the coherence scale…

强关联电子 · 物理学 2013-05-29 T. Senthil , P. A. Lee

1T-TaS$_2$ is a charge-density-wave (CDW) compound with a Mott-insulating ground state. The metallic state obtained by doping, substitution or pulsed charge injection is characterized by an emergent CDW domain wall network, while single…

强关联电子 · 物理学 2019-01-30 Jan Skolimowski , Yaroslav Gerasimenko , Rok Žitko

The physical nature of doped Mott-insulator has been intensively studied for more than three decades. It is well known that the single band Hubbard model or $t$-$J$ model on the bipartite lattice is the simplest model to describe a doped…

强关联电子 · 物理学 2023-01-09 Jian-Jian Miao , Zheng-Yuan Yue , Hao Zhang , Wei-Qiang Chen , Zheng-Cheng Gu

The spectral weight of states induced in the Mott gap via hole doping in the two-dimensional Hubbard model is studied within cluster dynamical mean field theory combined with finite-temperature exact diagonalization. If the cutoff energy is…

强关联电子 · 物理学 2015-05-18 A. Liebsch

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half-filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed…

强关联电子 · 物理学 2015-05-13 Maria Elisabetta Pezzoli , Federico Becca

We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…

强关联电子 · 物理学 2020-08-26 Sudeshna Sen , Patrick J. Wong , Andrew K. Mitchell

Based on the ladder dual-fermion approach, we present a comprehensive study of the phases of the isotropic Hubbard model on the triangular lattice. We find a rich phase diagram containing most of the phases that have already been…

强关联电子 · 物理学 2014-05-07 Gang Li , Andrey E. Antipov , Alexey N. Rubtsov , Stefan Kirchner , Werner Hanke

We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…

强关联电子 · 物理学 2012-06-26 Amal Medhi , Vijay B. Shenoy , H. R. Krishnamurthy