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The organic system, $\kappa$-[(BEDT-TTF)$_{1-x}$(BEDT-STF)$_x$]$_2$Cu$_2$(CN)$_3$, showing the Mott transition between a nonmagnetic Mott insulating (NMI) state and a Fermi liquid (FL), is systematically studied by calorimetric…

We present a new method, ePT, for extrapolating few known coefficients of a perturbative expansion. Controlled by comparisons with numerically exact quantum Monte Carlo (QMC) results, 10th order strong-coupling perturbation theory (PT) for…

强关联电子 · 物理学 2007-05-23 N. Blümer , E. Kalinowski

We investigate the properties of a two-orbital Hubbard model with unequal bandwidths on the square lattice in the framework of the dynamical cluster approximation (DCA) combined with a continuous-time quantum Monte Carlo (CT QMC) algorithm.…

强关联电子 · 物理学 2010-01-25 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti , Hartmut Monien

We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…

强关联电子 · 物理学 2009-11-10 Jianhui Dai , Xiaoyong Feng , Tao Xiang , Yue Yu

We investigate the strong correlation effect in the spinless electron-hole two-band Hubbard model using the dynamical mean-field theory. At half filling, both the renormalization factor $Z$ and the number of conduction electrons (valence…

强关联电子 · 物理学 2026-05-26 Masashi Akiyama , Yusuke Inokuma , Yoshiaki Ono

The spin dynamics of electron doped Mott insulators on a triangular lattice is studied based on the $t-J$ model. It is found that the particularly universal behaviors of integrated dynamical spin structure factor seen in the doped Mott…

强关联电子 · 物理学 2015-06-12 Bin Liu , Ying Liang

We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model…

强关联电子 · 物理学 2018-04-09 Adolfo Avella , Peter Horsch , Andrzej M. Oleś

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We have studied the ground state properties of Hubbard model on long six-leg square cylinders with doped hole concentration per site $5.55\% \leq \delta\leq 12.5\%$ using density-matrix renormalization group. By keeping a large number of…

强关联电子 · 物理学 2023-03-29 Yi-Fan Jiang , Thomas P. Devereaux , Hong-Chen Jiang

We report ten ground states arising from strong correlations in the single-orbital Hubbard model on the decorated honeycomb lattice; including Dirac metals, flat-band ferromagnets, real-space Mott insulators, dimer and trimer Mott…

强关联电子 · 物理学 2021-08-06 H. L. Nourse , Ross H. McKenzie , B. J. Powell

We study the evolution of a Mott-Hubbard insulator into a correlated metal upon doping in the two-dimensional Hubbard model using the Cellular Dynamical Mean Field Theory. Short-range spin correlations create two additional bands apart from…

强关联电子 · 物理学 2016-08-16 B. Kyung , S. S. Kancharla , D. Sénéchal , A. -M. S. Tremblay , M. Civelli , G. Kotliar

In the limit of large nearest--neighbor and on--site Coulomb repulsions, the Hubbard model on the planar pyrochlore lattice maps, near quarter-filling, onto a doped quantum fully packed loop model. The phase diagram exhibits at quarter…

强关联电子 · 物理学 2007-06-27 Didier Poilblanc , Karlo Penc , Nic Shannon

We study anisotropic lattice strips in the presence of a magnetic field in the quantum Hall effect regime. At specific magnetic fields, causing resonant Umklapp scattering, the system is gapped in the bulk and supports chiral edge states in…

介观与纳米尺度物理 · 物理学 2013-11-06 Jelena Klinovaja , Daniel Loss

When holes are doped into an antiferromagnetic insulator they form a slowly fluctuating array of ``topological defects'' (metallic stripes) in which the motion of the holes exhibits a self-organized quasi one-dimensional electronic…

强关联电子 · 物理学 2016-08-31 V. J. Emery , S. A. Kivelson , O. Zachar

We calculate the density of states in the half-filled Hubbard model on a Bethe lattice with infinite connectivity. Based on our analytical results to second order in $t/U$, we propose a new `Fixed-Energy Exact Diagonalization' scheme for…

The paramagnetic phase diagrams of the half-filled Hubbard model on a twisted bilayer square lattice are investigated using coherent potential approximation. Besides the conventional metallic, band insulating, and Mott insulating phases, we…

强关联电子 · 物理学 2024-04-09 Xiu-Cai Jiang , Ze Ruan , Yu-Zhong Zhang

The exact diagonalization and the variational cluster approximation (VCA) are used to study the nature of a novel Mott insulator induced by a strong spin-orbit coupling for a two-dimensional three-band Hubbard model consisting of the…

强关联电子 · 物理学 2014-11-24 Tomonori Shirakawa , Hiroshi Watanabe , Seiji Yunoki

We calculate the charge compressibility and uniform spin susceptibility for the two-dimensional (2D) Hubbard model slightly away from half-filling within a two-loop renormalization group scheme. We find numerically that both those…

强关联电子 · 物理学 2009-11-11 Hermann Freire , Eberth Correa , Alvaro Ferraz

We study phase diagrams of the Hubbard model on anisotropic triangular lattices, which also represents a model for $\kappa$-type BEDT-TTF compounds. In contrast with mean-field predictions, path-integral renormalization group calculations…

强关联电子 · 物理学 2007-05-23 Hidekazu Morita , Shinji Watanabe , Masatoshi Imada

We present density-matrix renormalization group results for the ground state properties of two-leg Hubbard ladders. The half-filled Hubbard ladder is an insulating spin-gapped system, exhibiting a crossover from a spin-liquid to a…

凝聚态物理 · 物理学 2009-10-28 R. M. Noack , S. R. White , D. J. Scalapino