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We introduce a Hubbard model on a particular class of geometries, and consider the effect of doping the highly spin-degenerate Mott-insulating state with a microscopic number of holes in the extreme strong-coupling limit. The geometry is…

强关联电子 · 物理学 2009-11-10 J. D. Champion , M. W. Long

We study the energy spectrum of a system of localized states coupled to a 2D electron gas in strong magnetic field. If the energy levels of localized states are close to the electron energy in the plane, the system exhibits a kind of…

介观与纳米尺度物理 · 物理学 2009-10-30 T. V. Shahbazyan , S. E. Ulloa

The two-orbital Hubbard model for the pnictides is studied numerically using the real-space Hartree-Fock approximation on finite clusters. Upon electron doping, states with a nonuniform distribution of charge are stabilized. The observed…

超导电性 · 物理学 2011-09-09 Qinlong Luo , Dao-Xin Yao , Adriana Moreo , Elbio Dagotto

Within the framework of the fermion-spin theory, the charge transport in the doped Mott insulators on a honeycomb lattice is studied by taking into account the pseudogap effect. It is shown that the conductivity spectrum in the low-doped…

超导电性 · 物理学 2016-05-04 Xixiao Ma , Yu Lan , Ling Qin , Shiping Feng

The layered Mott insulator ${\alpha}$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on…

强关联电子 · 物理学 2023-05-08 Xiaohu Zheng , Ke Jia , Junhai Ren , Chongli Yang , Xingjun Wu , Youguo Shi , Katsumi Tanigaki , Rui-Rui Du

Analysis of higher-order correlation functions has become a powerful tool for investigating interacting many-body systems in quantum simulators, such as quantum gas microscopes. Experimental measurements of mixed spin-charge correlation…

强关联电子 · 物理学 2021-09-08 Yao Wang , Annabelle Bohrdt , Joannis Koepsell , Eugene Demler , Fabian Grusdt

The effect of an alternating potential on a one-dimensional half-filled Hubbard model with repulsive interaction has been examined by applying the renormalization group method to the bosonized Hamiltonian. The electronic state, which is…

强关联电子 · 物理学 2009-10-31 Masahisa Tsuchiizu , Yoshikazu Suzumura

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We present a theory of the electron smectic fixed point of the stripe phases of doped layered Mott insulators. We show that in the presence of a spin gap three phases generally arise: (a) a smectic superconductor, (b) an insulating stripe…

强关联电子 · 物理学 2009-10-31 Victor J. Emery , Eduardo Fradkin , Steven A. Kivelson , Tom C. Lubensky

We analyze theoretically the experiment reported in [F. Gerbier et al, cond-mat/0503452], where the interference pattern produced by an expanding atomic cloud in the Mott insulator regime was observed. This interference pattern, indicative…

其他凝聚态物理 · 物理学 2007-05-23 Fabrice Gerbier , Artur Widera , Simon Foelling , Olaf Mandel , Tatjana Gericke , Immanuel Bloch

We numerically calculate the local density of states (LDOS) of a one-dimensional Mott insulator with open boundaries, which is modelled microscopically by a (extended) Hubbard chain at half filling. In the Fourier transform of the LDOS we…

强关联电子 · 物理学 2017-05-10 Benedikt Schoenauer , Peter Schmitteckert , Dirk Schuricht

The problem of a mobile hole doped into an antiferromagnet Mott insulator is believed to underly the rich physics of several paradigmatic strongly correlated electron systems, ranging from heavy fermions to high-Tc superconductivity.…

强关联电子 · 物理学 2025-12-02 Piotr Wrzosek , Krzysztof Wohlfeld , Eugene A. Demler , Annabelle Bohrdt , Fabian Grusdt

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

Spin excitations are explored in the electron-doped spin-orbit Mott insulator (Sr$_{1-x}$La$_{x}$)$_3$Ir$_2$O$_7$. As this bilayer square lattice system is doped into the metallic regime, long-range antiferromagnetism vanishes, yet a…

Local spin fluctuations provide the glue for orbital-singlet spin-triplet pairing in the doped Mott insulating regime of multi-orbital Hubbard models. At large Hubbard repulsion $U$, the pairing susceptibility is nevertheless very low,…

强关联电子 · 物理学 2018-04-18 Philipp Werner , Hugo Strand , Shintaro Hoshino , Yuta Murakami , Martin Eckstein

Motivated by recent Raman and resonant inelastic X-ray scattering experiments performed for Mott insulators, which suggest formation of excitons in these systems, we present a theory of exciton formation in the upper Hubbard band. The…

强关联电子 · 物理学 2009-11-07 P. Wrobel , R. Eder

Rotational states for trapped bosons in an optical lattice are studied in the framework of the Hubbard model. Critical frequencies are calculated and the main parameter regimes are identified. Transitions are observed from edge superfluids…

其他凝聚态物理 · 物理学 2009-11-13 Emil Lundh

In the framework of the two-band model of a doped semiconductor the self-consistent equations describing the transition into the excitonic insulator state are obtained for the 2D case. It is found that due to the exciton-electron…

凝聚态物理 · 物理学 2009-10-22 Michael N. Kiselev

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show…

We investigate an experimental toy-model system of a pseudospin-half square-lattice Hubbard Hamiltonian in [(SrIrO3)1/(CaTiO3)1] to include both nontrivial complex hopping and moderate electronic correlation. While the former induces…