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We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of…

强关联电子 · 物理学 2009-11-11 Ting-Pong Choy , Philip Phillips

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

超导电性 · 物理学 2021-06-14 Haiwei Li , Shusen Ye , Jianfa Zhao , Changqing Jin , Yayu Wang

The electronic structure of the lightly hole-doped triangular-lattice moir\'e Hubbard model is studied within cluster perturbation theory (CPT) using 13-site clusters for a fixed doping concentration $p=1/13$ varying the Coulomb parameter…

强关联电子 · 物理学 2025-09-26 V. I. Kuz'min , M. A. Visotin , S. G. Ovchinnikov

We investigate the connection between doping-induced in-gap states and underlying spin excitations in Mott insulators by employing cluster perturbation theory on one-dimensional (1D) and quasi-1D Kitaev-Hubbard models. By manipulating…

强关联电子 · 物理学 2026-05-13 Si-Qi Hou , Shun-Li Yu , Zhao-Yang Dong , Jian-Xin Li

Motivated by recent experimental progress on various cluster Mott insulators, we study an extended Hubbard model on a breathing Kagom\'{e} lattice with a single electron orbital and $1/6$ electron filling. Two distinct types of cluster…

强关联电子 · 物理学 2021-01-05 Xu-Ping Yao , Xiao-Tian Zhang , Yong Baek Kim , Xiaoqun Wang , Gang Chen

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

We find a state characterized by a spontaneous loop-spin current and a single-particle gap in the Hubbard model within the variational cluster approach. This state exists for arbitrarily small interaction in a half-filled honeycomb lattice.…

强关联电子 · 物理学 2014-08-06 Shimpei Goto , Keisuke Masuda , Susumu Kurihara

Inspired by recent experimental findings, we investigate various scenarios of the doped Hubbard model with impurity potentials. We calculate the lattice Green's function in a finite-size cluster and then map it to the continuum real space,…

强关联电子 · 物理学 2025-09-12 Ning Xia , Yuchen Guo , Shuo Yang

The variational cluster approximation is used to study the frustrated Hubbard model at half filling defined on the two-dimensional square lattice with anisotropic next-nearest-neighbor hopping parameters. We calculate the ground-state phase…

强关联电子 · 物理学 2017-02-02 Kazuma Misumi , Tatsuya Kaneko , Yukinori Ohta

The physics of the triangular lattice Hubbard model exhibits a rich phenomenology, ranging from a metal-insulator transition, intriguing thermodynamic behavior, and a putative spin liquid phase at intermediate coupling, ultimately becoming…

We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard…

强关联电子 · 物理学 2007-05-23 N. E. Bickers , D. J. Scalapino

We study novel electronic properties of the Hubbard model on a triangular lattice using the cellular dynamical mean-field theory. The interplay of strong geometric frustration and electron correlations causes a Mott transition at the…

强关联电子 · 物理学 2009-11-11 Bumsoo Kyung

Nematicity is a well known property of liquid crystals and has been recently discussed in the context of strongly interacting electrons. An electronic nematic phase has been seen by many experiments in certain strongly correlated materials,…

强关联电子 · 物理学 2014-11-21 Kun Fang , G. W. Fernando , A. K. Kocharian

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature.…

强关联电子 · 物理学 2009-11-07 Tudor D. Stanescu , Philip Phillips

Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

The interplay between strong electronic correlations and the inherent frustration of certain lattice geometries is a common mechanism for the formation of nontrivial states of matter. In this work, we theoretically explore the collective…

强关联电子 · 物理学 2025-07-21 Evgeny A. Stepanov

A key open issue in condensed matter physics is how quantum and classical correlations emerge in an unconventional superconductor from the underlying normal state. We study this problem in a doped Mott insulator with information theory…

强关联电子 · 物理学 2022-03-01 C. Walsh , M. Charlebois , P. Sémon , G. Sordi , A. -M. S. Tremblay

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

We study the attractive Hubbard model in the Lieb lattice to understand the normal state above the superconducting critical temperature in a flat band system. We use cluster dynamical mean-field theory to compute the two-particle…

强关联电子 · 物理学 2021-06-09 Kukka-Emilia Huhtinen , Päivi Törmä

Since the discovery of half-filled cuprate to be a Mott insulator, the excitation spectra above the chemical potential for the unoccupied states has attracted many research attentions. There were many theoretical works using different…

超导电性 · 物理学 2017-01-25 Huan-Kuang Wu , Ting-Kuo Lee
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