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We investigate the Hubbard model on the honeycomb lattice with intrinsic spin orbit interactions as a paradigm for two-dimensional topological band insulators in the presence of interactions. Applying a combination of Hartree-Fock theory,…

强关联电子 · 物理学 2015-03-13 Stephan Rachel , Karyn Le Hur

A microscopic theory is presented for the local moment formation near a non-magnetic impurity or a copper defect in high-T_c superconductors. We use a renormalized meanfield theory of the t-J model for a doped Mott insulator and study the…

强关联电子 · 物理学 2009-11-07 Ziqiang Wang , Patrick A. Lee

Motivated by superconductivity (SC) in layered nitrides, we study an ionic-Hubbard model on a honeycomb lattice, which consists of two sublattices with an energy-level offset, by using an optimization variational Monte Carlo method.…

超导电性 · 物理学 2015-06-11 Tsutomu Watanabe , Sumio Ishihara

The recently observed superconductivity in twisted bilayer graphene emerges from insulating states believed to arise from electronic correlations. While there have been many proposals to explain the insulating behaviour, the…

强关联电子 · 物理学 2020-01-06 J. M. Pizarro , M. J. Calderón , E. Bascones

Motivated by the realization of spin-valley Hubbard on triangular moir\'e superlattice in ABC trilayer graphene aligned with hexagon boron nitride (hBN) and possibly also in twisted transition metal dichalcogenide homobilayers, we study…

强关联电子 · 物理学 2020-01-22 Ya-Hui Zhang , Dan Mao

The problem of doping Mott insulators is of fundamental importance and long-standing interest in the study of strongly correlated electron systems. The advent of semiconductor based moir\'e materials opens a new ground for simulating the…

强关联电子 · 物理学 2024-01-09 Yang Zhang , Liang Fu

We study the physics on the paramagnetic side of the phase diagram of the cobaltates, $Na_{x}CoO_{2}$, with an implementation of cellular dynamical mean field theory (CDMFT) with the non-crossing approximation (NCA) for the one-band Hubbard…

强关联电子 · 物理学 2009-11-13 Dimitrios Galanakis , Tudor Stanescu , Philip Phillips

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini

Routes to enhance superconducting instability are explored for doped Mott insulators. With the help of insights for criticalities of metal-insulator transitions, geometrical design of lattice structure is proposed to control the…

强关联电子 · 物理学 2009-10-31 Masatoshi Imada , Masanori Kohno

Mott insulators with localized magnetic moments will exhibit a quantum spin liquid (QSL) state when the quantum fluctuations are strong enough to suppress the ordering of the spins. Such an entangled state will give rise to collective…

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

Moir\'e super-potentials in two-dimensional materials allow unprecedented control of the ratio between kinetic and interaction energy. By this, they pave the way to study a wide variety of strongly correlated physics under a new light. In…

强关联电子 · 物理学 2022-01-03 Amir Dalal , Jonathan Ruhman

The Mott transition is observed experimentally in materials that are magnetically frustrated so that long-range order does not hide the Mott transition at finite temperature. The Hubbard model on the triangular lattice at half-filling is a…

强关联电子 · 物理学 2023-04-03 P. -O. Downey , O. Gingras , J. Fournier , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

We theoretically investigate the doping evolution of the electronic state of high-Tc cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock…

强关联电子 · 物理学 2015-04-08 Shigeru Koikegami , Masaru Kato , Takashi Yanagisawa

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…

Understanding doped Mott insulators is a fundamental goal in condensed matter physics, with relevance to cuprate superconductors and other quantum materials. The doped Hubbard model minimally describes such systems, and has explicated some…

Using the variational cluster approach based on the self-energy functional theory, we study the possible occurrence of excitonic order and superconductivity in the two-orbital Hubbard model with intra- and inter-orbital Coulomb…

强关联电子 · 物理学 2018-05-17 Ryo Fujiuchi , Koudai Sugimoto , Yukinori Ohta

Ideas about resonant valence bond liquids and spin-charge separation have led to key concepts in physics such as quantum spin liquids, emergent gauge symmetries, topological order, and fractionalisation. Despite extensive efforts to…

The magnetic properties and Mott transition of the Hubbard model on the square lattice with frustration are studied at half-filling and zero temperature by the variational cluster approximation. When the on-site repulsion $U$ is large,…

强关联电子 · 物理学 2015-06-15 A. Yamada , K. Seki , R. Eder , Y. Ohta