相关论文: Robust topological insulator surface conduction un…
We numerically demonstrate a practical means of systematically controlling topological transport on the surface of a three dimensional topological insulator, by introducing strong disorder in a layer of depth $d$ extending inward from the…
Spin-orbit coupled materials have attracted revived prominent research interest as of late, especially due their direct connection with topological notions. Arguably, a hallmark of this pursuit is formed by the concept of the topological…
We investigate the effects of magnetic and nonmagnetic impurities on the two-dimensional surface states of three-dimensional topological insulators (TIs). Modeling weak and strong TIs using a generic four-band Hamiltonian, which allows for…
Two-dimensional topological insulators are characterized by gapped bulk states and gapless helical edge states, i.e. time-reversal symmetric edge states accommodating a pair of counter-propagating electrons. An external magnetic field…
This paper proposes a quantitative description of the low energy edge states at the interface between two-dimensional topological insulators. They are modeled by continuous Hamiltonians as systems of Dirac equations that are amenable to a…
In the past few years materials with protected gapless surface (edge) states have risen to the central stage of condensed matter physics. Almost all discussions centered around topological insulators and superconductors, which possess full…
We found that non-magnetic defects in two-dimensional topological insulators induce bound states of two kinds for each spin orientation: electron- and hole-like states. Depending on the sign of the defect potential these states can be also…
Topological insulators are noninteracting, gapped fermionic systems which have gapless boundary excitations. They are characterized by topological invariants, which can be written in many different ways, including in terms of Green's…
Three dimensional topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap as demonstrated via spin-resolved ARPES measurements . This…
Recently, higher-order topological insulators have been attracting extensive interest. Unlike the conventional topological insulators that demand bulk gap closings at transition points, the higher-order band topology can be changed without…
Bulk-boundary correspondence serves as an important feature of the strong topological insulators, including Chern insulators and $Z_2$ topological insulators. Under nontrivial band topology, the protected gapless edge states correspond to…
Topological phononic insulators are the counterpart of three-dimensional quantum spin Hall insulators in phononic systems and, as such, their topological surfaces are characterized by Dirac cone-shaped gapless edge states arising as a…
Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge…
Topological insulators have been extended to higher-order versions that possess topological hinge or corner states in lower dimensions. However, their robustness against disorder is still unclear. Here, we theoretically investigate the…
Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless…
We study disorder effects on the surface states of the topological insulator Bi$_2$Se$_3$ close to the topologically protected crossing point. Close to charge neutrality, local fluctuations in carrier density arising from the random charged…
Topological behavior can be masked when disorder is present. A topological insulator, either intrinsic or interaction induced, may turn gapless when sufficiently disordered. Nevertheless, the metallic phase that emerges once a topological…
The surface states of the three dimensional (3D) Topological Insulators are described by two-dimensional (2D) massless dirac equation. A gate voltage induced one dimensional potential barrier on such surface creates a discrete bound state…
The 2D TI edge states are considered within the Volkov-Pankratov (VP) Hamiltonian. A smooth transition between TI and OI is assumed. The edge states are formed in the total gap of homogeneous 2D material. A pair of these states are of…
Bulk-boundary correspondence guarantees the presence of robust, anomalous states on the boundary of topological matter. The edges of a two-dimensional Chern insulator harbor one-dimensional chiral states, which have a conductance $n\,…