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We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a…

介观与纳米尺度物理 · 物理学 2009-11-11 B. Kaestner , J. Wunderlich , T. J. B. M. Janssen

The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices,…

We use a frequency-dependent electro-optic technique to measure the hole mobility in small molecule organic semiconductors, such as 6,13 bis(triisopropylsilylethynyl)-pentacene. Measurements are made on semiconductor films in bottom gate,…

材料科学 · 物理学 2012-12-20 Emily G. Bittle , Joseph W. Brill , Joseph P. Straley

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene,…

介观与纳米尺度物理 · 物理学 2012-09-17 Han Wang , Lili Yu , Yi-Hsien Lee , Yumeng Shi , Allen Hsu , Matthew Chin , Lain-Jong Li , Madan Dubey , Jing Kong , Tomas Palacios

A simple electronic experiment with a field effect transistor type microstructure is suggested. The thin superconductor layer is the source-drain channel of the layered structure where an AC current is applied. It is necessary to measure…

超导电性 · 物理学 2009-09-29 Todor Mishonov , Martin Stoev

A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…

介观与纳米尺度物理 · 物理学 2009-10-31 S. Luescher , A. Fuhrer , R. Held , T. Heinzel , K. Ensslin , W. Wegscheider

Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…

介观与纳米尺度物理 · 物理学 2015-11-26 Malgorzata Wierzbowska

Thin films of functional inorganic materials, particularly oxides, play a vital role in optoelectronics, enabling applications that range from active optical components to MEMS-based architectures. Achieving high aspect ratio patterning of…

Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the…

应用物理 · 物理学 2018-09-30 Nikos Papadopoulos , Joshua O. Island , Herre S. J. van der Zant , Gary A. Steele

In the last decade, advancements in attosecond spectroscopy have allowed us to study electron motion dynamics in condensed matter. The access to these electron dynamics and, consequently, its control by an ultrafast light field paves the…

介观与纳米尺度物理 · 物理学 2025-05-12 Mohamed Sennary , Jalil Shah , Mingrui Yuan , Ahmed Mahjoub , Vladimir Pervak , Nikolay Golubev , Mohammed Hassan

Copper oxide thin film based metal-insulator-metal structures were subjected to white light irradiation.The top electrodes included Al, Cr and Ni while the bottom electrode was either Au or Pt. A white light pulse controls the set process…

材料科学 · 物理学 2020-11-03 L. D. Varma Sangani , M. Ghanashyam Krishna

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing…

应用物理 · 物理学 2020-09-16 Andrea Perinot , Michele Giorgio , Virgilio Mattoli , Dario Natali , Mario Caironi

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

介观与纳米尺度物理 · 物理学 2010-10-19 Sneh Saurabh , M. Jagadesh Kumar

We propose and substantiate the concept of terahertz (THz) laser enabled by the resonant electron radiative transitions between graphene layers (GLs) in double-GL structures. We estimate the THz gain for TM-mode exhibiting very low Drude…

介观与纳米尺度物理 · 物理学 2015-06-17 V. Ryzhii , A. A. Dubinov , V. Ya. Aleshkin , M. Ryzhii , T. Otsuji

Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that exploit direct band-to-band tunneling of charges and exhibit…

We report the development of indium oxide (In2O3) transistors via a single step laser-induced photochemical conversion process of a sol-gel metal oxide precursor. Through careful optimization of the laser annealing conditions we…

材料科学 · 物理学 2017-05-26 S. Dellis , I. Isakov , N. Kalfagiannis , K. Tetzner , T. D. Anthopoulos , D. C. Koutsogeorgis

We have fabricated a grating-gate InGaAs/GaAs field-effect transistor structure with narrow slits between the grating gate fingers. The resonant photoconductive response of this structure has been measured in the sub-terahertz frequency…

An effective interaction between trapped ions in thermal motion can be generated by illuminating them simultaneously with a single laser resonant with the ionic carrier frequency. The ac Stark-shift induces simultaneous `virtual' two-phonon…

量子物理 · 物理学 2009-11-07 Daniel Jonathan , Martin B. Plenio

We present the generation of transient polarization gratings at the nanoscale, achieved using a tailored accelerator configuration of the FERMI free electron laser. We demonstrate the capabilities of such a transient polarization grating by…

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable…