相关论文: Laser written junctionless dual in-plane-gate thin…
Thin film lithium niobate (TFLN) based electro-optic modulator is widely applied in the field of broadband optical communications due to its advantages such as large bandwidth, high extinction ratio, and low optical loss, bringing new…
As we rapidly advance through the information age, the power consumed by computers, data centers, and networks grows exponentially. This has inspired a race to develop alternative low-power computational technologies. A new adiabatic…
Matrix-vector multiplications are fundamental operations in artificial intelligence and high-throughput computations, and are executed repeatedly during training and inference. Their high energy cost in electronic processors motivate…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
This thesis proposes novel ternary circuits aiming to reduce energy to preserve battery consumption. The proposed designs include eight ternary logic gates, three ternary combinational circuits, and six Ternary Arithmetic Logic Units. This…
Thin-film lithium niobate (TFLN) has a proven record of building high-performance electro-optical (EO) modulators. However, its CMOS incompatibility and the need for non-standard etching have consistently posed challenges in terms of…
We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to…
A key aim in spintronics is to achieve current-induced magnetization switching via spin-orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across…
Scan-based Design-for-Testability (DFT) measures are prevalent in modern digital integrated circuits to achieve high test quality at low hardware cost. With the advent of 3D heterogeneous integration and chiplet-based systems, the role of…
Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named…
This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review…
Inductance of superconducting thin-film inductors and structures with linewidth down to 250 nm has been experimentally evaluated. The inductors include various striplines and microstrips, their 90-degree bends and meanders, interlayer vias,…
We reported on a graphical domain engineering technique with the capability to fabricate macroscale domain structures with nanoscale spatial resolution in non-polar-cut lithium niobate thin film on insulators through the biased probe tip of…
Dewetting of thin metal films is one of the most widespread method for functional plasmonic nanostructures fabrication. However, simple thermal-induced dewetting does not allow to control degree of nanostructures order without additional…
This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International…
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-electrolyte gates, which pose experimental constraints and make…
Electrodes with higher transparency that can also align liquid crystals (LCs) are of high importance for improved costs and energy consumption of LC displays. Here we demonstrate for the first time alignment of liquid crystals on…
The realization of all-optical logic gates (AOLGs) is important for advancing photonic integrated circuit (PIC) design and optical data communication. Various photonic structures and design techniques, including two-dimensional photonic…
Photo-gated transistors based on dye-sensitized nanocrystalline titanium dioxide thin film are established. A transistor-like transport behavior characterized by the linear increase, saturated plateau, and breakdown-like increase in the…
In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to…