相关论文: Laser written junctionless dual in-plane-gate thin…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
Organic electrochemical transistors (OECTs) are key bioelectronic devices, with applications in neuromorphics, sensing, and flexible electronics. However, their microfabrication typically relies on precious metal contacts manufactured via…
This article is withdrawn since it is published in a journal We report on the first reduction methodology, compatible with flexible, temperature sensitive substrates, for the production of reduced spin coated graphene oxide (GO) electrodes.…
We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors,…
We investigate electromagnetic properties of a topological crystalline insulator (TCI) thin film under external electromagnetic fields. The TCI thin film is a topological insulator indexed by the mirror-Chern number. It is demonstrated that…
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and…
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable…
Floating gate transistor is the basic building block of non-volatile flash memory, which is one of the most widely used memory gadgets in modern micro and nano electronic applications. Recently there has been a surge of interest to…
Studying thermal transport at the nanoscale poses formidable experimental challenges due both to the physics of the measurement process and to the issues of accuracy and reproducibility. The laser-induced transient thermal grating (TTG)…
Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80%…
We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating…
The dominant error sources for state-of-the-art laser-free trapped-ion entangling gates are decoherence of the qubit state and the ion motion. The effect of these decoherence mechanisms can be suppressed with additional control fields, or…
A new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti is presented. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask.…
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on…
Thin film optical elements exhibiting translational invariance, and thus robustness to optical misalignment, are crucial for rapid development of compact and integrated optical devices. In this letter, we experimentally demonstrate a…
We report the formation of arbitrary photoconductive patterns made of tellurium (Te) nanocrystals by exposing a tellurite (TeO2-based) glass to femtosecond laser pulses. During this process, Te/TeO2-glass nanocomposite interfaces with…
We report the fabrication of alkali-metal vapor cells using femtosecond laser machining. This laser-written vapor-cell (LWVC) technology allows arbitrarily-shaped 3D interior volumes and has potential for integration with photonic…
Magnonic logic gates represent a crucial step toward realizing fully magnonic data processing systems without reliance on conventional electronic or photonic elements. Recently, a universal and reconfigurable inverse-design device has been…
High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with…
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…