相关论文: Laser written junctionless dual in-plane-gate thin…

In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 {\mu}A/{\mu}m…

We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility…

Highly transparent and conductive electrodes operating in the infrared (IR) are critically needed for a broad range of technologies, including light-emitting diodes, lasers and photodetectors, which are key building blocks of infrared…

Collision between relativistic electron sheets and counter-propagating laser pulses is recognized as a promising way to produce intense attosecond X-rays through coherent Thomson backscattering (TBS). In a double-layer scheme, the electrons…

Junctionless Nanowire Field-Effect Transistors (JNFETs), where the channel region is uniformly doped without the need for source-channel and drain-channel junctions or lateral doping abruptness, are considered an attractive alternative to…

Aiming to achieve both high functionality and flexibility in soft robot system, this paper presents a soft urethane sheet-like valve with an amplifier that can perform logical operations using only pneumatic signals. When the control…

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD…

Although semiconductor to metal phase transformation of MoTe$_{2}$ by high-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a…

We report on femtosecond laser writing of single mode optical waveguides in chalcogenide Gallium Lanthanum Sulphide (GLS) glass. A multiscan fabrication process was employed to create waveguides with symmetric single mode guidance and low…

Security labels combining facile structural color readout and physically unclonable one-way function (PUF) approach provide promising strategy for fighting against forgery of marketable products. Here, we justify direct femtosecond-laser…

Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit…

High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting…

We demonstrate a novel, composite laser written 3D waveguide, fabricated in boro-aluminosilicate glass, with a refractive index contrast of 1.12 x 10^-2. The waveguide is fabricated using a multi-pass approach which leverages the respective…

This paper describes a novel design of a threshold logic gate (a binary perceptron) and its implementation as a standard cell. This new cell structure, referred to as flash threshold logic (FTL), uses floating gate (flash) transistors to…

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC…

Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…

Arrays of H-shape microfluidic channels connecting two different fluidic reservoirs have been built with silicon/SU8 microfabrication technologies utilized in production of thermal inkjet printheads. The fluids are delivered to the channels…

Logic gates are an indispensable part of digital circuits, and therefore such devices with fast operating speeds and simple designs are vital for all kinds of electronic applications. This paper proposes simple Y-shaped designs of…

Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the…

Two-level systems (TLS) are an important, if not dominant, source of loss and noise for superconducting resonators such as those used in kinetic inductance detectors and some quantum information science platforms. They are similarly…