Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.
@article{arxiv.2107.00444,
title = {Bridging the gap between atomically thin semiconductors and metal leads},
author = {Xiangbin Cai and Zefei Wu and Xu Han and Shuigang Xu and Jiangxiazi Lin and Tianyi Han and Pingge He and Xuemeng Feng and Liheng An and Run Shi and Jingwei Wang and Zhehan Ying and Yuan Cai and Mengyuan Hua and Junwei Liu and Ding Pan and Chun Cheng and Ning Wang},
journal= {arXiv preprint arXiv:2107.00444},
year = {2022}
}