利用电子束光刻制造的钛单电子晶体管

presented a new method to fabricate non-superconducting mesoscopic tunnel junctions by oxidation of Ti. The fabrication process uses conventional electron beam lithography and shadow deposition through an organic resist mask. Superconductivity in Ti is suppressed by performing the deposition under a suitable background pressure. We demonstrate the method by making a single electron transistor which operated at $T < 0.4$ K and had a moderate charge noise of $2.5 \times 10^{-3}$ e/$\sqrt{\mathrm{Hz}}$ at 10 Hz. Based on nonlinearities in the current-voltage characteristics at higher voltages, we deduce the oxide barrier height of approximately 110 mV.