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Controllable quantized conductance states of TiN/Ti/HfO$_x$/TiN memristors are realized with great precision through a pulse-mode reset procedure, assisted with analytical differentiation of the condition of the set procedure, which…

介观与纳米尺度物理 · 物理学 2021-09-29 Min-Hsuan Peng , Ching-Yang Pan , Hao-Xuan Zheng , Ting-Chang Chang , Pei-hsun Jiang

Recent advancements in reservoir computing research have created a demand for analog devices with dynamics that can facilitate the physical implementation of reservoirs, promising faster information processing while consuming less energy…

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

材料科学 · 物理学 2016-11-15 Ella Gale

Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase-change memory. When…

The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of…

统计力学 · 物理学 2017-01-18 Forrest C. Sheldon , Massimiliano Di Ventra

Memristors are among the most promising elements for modern microelectronics, having unique properties such as quasi-continuous change of conductance and long-term storage of resistive states. However, identifying the physical mechanisms of…

介观与纳米尺度物理 · 物理学 2022-05-25 Oleg G. Kharlanov , Boris S. Shvetsov , Vladimir V. Rylkov , Anton A. Minnekhanov

The memristive crossbar array (MCA) has been successfully applied to accelerate matrix computations of signal detection in massive multiple-input multiple-output (MIMO) systems. However, the unique property of massive MIMO channel matrix…

信号处理 · 电气工程与系统科学 2025-03-24 Jia-Hui Bi , Shaoshi Yang , Ping Zhang , Sheng Chen

The increasing computational demands of deep learning models pose significant challenges for edge devices. To address this, we propose a memristor-based circuit design for MobileNetV3, specifically for image classification tasks. Our design…

硬件体系结构 · 计算机科学 2025-04-04 Jiale Li , Zhihang Liu , Sean Longyu Ma , Chiu-Wing Sham , Chong Fu

In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their…

介观与纳米尺度物理 · 物理学 2011-09-29 Y. V. Pershin , J. Martinez-Rincon , M. Di Ventra

In this letter, a reactance-less mono-stable oscillator is introduced for the first time using memristors. By replacing bulky inductors and capacitors with memristors, the novel mono-stable oscillator can be an area-efficient solution for…

新兴技术 · 计算机科学 2012-07-05 A. T. Bahgat , K. N. Salama

While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic…

Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is…

新兴技术 · 计算机科学 2021-01-18 Y. V. Pershin , M. Di Ventra

The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our…

介观与纳米尺度物理 · 物理学 2023-10-03 V. J. Dowling , Y. V. Pershin

An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with…

神经与进化计算 · 计算机科学 2019-09-18 Y. V. Pershin , M. Di Ventra

The development of memristive device technologies has reached a level of maturity to enable the design of complex and large-scale hybrid memristive-CMOS neural processing systems. These systems offer promising solutions for implementing…

新兴技术 · 计算机科学 2020-04-22 Elisabetta Chicca , Giacomo Indiveri

Over the last decade, memristive devices have been widely adopted in computing for various conventional and unconventional applications. While the integration density, memory property, and nonlinear characteristics have many benefits,…

新兴技术 · 计算机科学 2017-04-21 Dat Tran , Christof Teuscher

There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli…

材料科学 · 物理学 2013-12-17 Ella M. Gale , Benjamin de Lacy Costello , Andrew Adamatzky

We investigate critical properties of a class of number-conserving cellular automata (CA) which can be interpreted as deterministic models of traffic flow with anticipatory driving. These rules are among the only known CA rules for which…

元胞自动机与格子气 · 物理学 2023-12-18 Henryk Fuks

Memristors close the loop for I-V characteristics of the traditional, passive, semi-conductor devices. Originally proposed in 1971, the hunt for the memristor has been going ever since. The key feature of a memristor is that its current…

神经与进化计算 · 计算机科学 2022-03-30 Alexander E. Beasley , Mohammed-Salah Abdelouahab , René Lozi , Anna L. Powell , Andrew Adamatzky

Transtor and memtranstor are the fourth basic linear and memory elements, which allows direct coupling of charge (q) to magnetic flux ({\phi}) via linear and non-linear ME effects, respectively. It is found here that large variation of…

材料科学 · 物理学 2021-11-09 Yisheng Chai , Dashan Shang , SaeHwan Chun , Young Sun , KeeHoon Kim