相关论文: Dynamical properties of electrical circuits with f…

The explosive growth of artificial intelligence and data-intensive computing has brought crucial challenge to modern information science and technology, i.e. conceptually new devices with superior properties are urgently desired. Memristor…

In this paper, we build a general modelling framework for memristors, suitable for the simulation of event-based systems such as hardware spiking neural networks, and more generally, neuromorphic computing systems composed of three…

The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such…

Memristors are an electronic device whose resistance depends on the voltage history that has been applied to its two terminals. Despite its clear advantage as a computational element, a suitable transport model is lacking for the special…

In-memory computing is an emerging non-von Neumann computing paradigm where certain computational tasks are performed in memory by exploiting the physical attributes of the memory devices. Memristive devices such as phase-change memory…

Electrostatic actuators are simple but important switching devices for MEMS applications. Due to the difficulties associated with the electrostatic nonlinearity, precise mathematical description is often hard to obtain for the dynamics of…

The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with…

Adaptive response to a varying environment is a common feature of biological organisms. Reproducing such features in electronic systems and circuits is of great importance for a variety of applications. Here, we consider memory models…

This paper examines the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in memristive devices, focusing on ReRAM devices, specifically the interface-type or non-filamentary analog switching devices. A…

While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis).…

This study investigates how dynamical systems may be learned and modelled with a neuromorphic network which is itself a dynamical system. The neuromorphic network used in this study is based on a complex electrical circuit comprised of…

Memristors are promising next-generation memory candidates that are nonvolatile, possess low power requirements and are capable of nanoscale fabrication. In this article we physically realise and describe the use of organic memristors in…

We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance…

The oscillatory response of nonlinear systems exhibits characteristic phenomena such as multistability, discontinuous jumps and hysteresis. These can be utilized in applications leading, e.g., to precise frequency measurement, mixing,…

A powerful time series analysis modeling technique is presented to describe cycle-to-cycle variability in memristors. These devices show variability linked to the inherent stochasticity of device operation and it needs to be accurately…

Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…

Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and…

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain…

Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid…