相关论文: Enhanced annealing, high Curie temperature and low…

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that…

We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires…

A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not…

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in…

A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as…

Annealing can increase the Curie temperature and net magnetization in uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped (Ga,Mn)As…

We examine the Mn concentration dependence of the electronic and magnetic properties of optimally annealed Ga1-xMnxAs epilayers for 1.35% < x < 8.3%. The Curie temperature (Tc), conductivity, and exchange energy increase with Mn…

X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…

(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of…

Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of…

We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very…

High- and low-field magneto-transport measurements, as well as SQUID measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various…

We demonstrate that low concentrations of a secondary magnetic phase in (Ga,Mn)As thin films can enhance the coercivity by factors up to ~100 without significantly degrading the Curie temperature or saturation magnetisation. Magnetic…

We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering…

We show that by annealing Ga1-xMnxAs thin films at temperatures significantly lower than in previous studies, and monitoring the resistivity during growth, an unprecedented high Curie temperature Tc and conductivity can be obtained. Tc is…

We report Curie temperatures up to 150 K in annealed Ga1-xMnxAs epilayers grown with a relatively low As:Ga beam equivalent pressure ratio. A variety of measurements (magnetization, Hall effect, magnetic circular dichroism and Raman…

We report a clear correspondence between changes in the Curie temperature and carrier density upon annealing in epitaxially grown (Ga,Mn)As layers with thicknesses in the range between 5 nm and 20 nm. The changes are dependent on the layer…

Kerr rotation and Superconducting QUantum Interference Device (SQUID) magnetometry measurements were performed on ultrathin (Ga$_{0.95}$Mn$_{0.05}$)As layers. The thinner layers (below 250 \AA) exhibit magnetic properties different than…

The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…