HgTe 量子阱纳米结构中的准波动输运
介观与纳米尺度物理
2009-11-10 v2
摘要
研究了由高迁移率 HgTe 量子阱制造的微米尺度结构的输运特性。采用特殊的光阻和 Ti 掩模，这些方法允许制造特征尺寸可达 0.45 m 的器件。 presented 证据表明，这些结构的输运特性由球形效应主导。半经典电子轨迹的蒙特卡罗模拟与实验结果良好一致。
引用
@article{arxiv.cond-mat/0305078,
title = {Quasi-ballistic transport in HgTe quantum-well nanostructures},
author = {V. Daumer and I. Golombek and M. Gbordzoe and E. G. Novik and V. Hock and C. R. Becker and H. Buhmann and L. W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0305078},
year = {2009}
}
备注
3 pages, 3 figures; minor revisions: replaced "inelastic mean free path" with "transport mean free path"; corrected typing errors; restructered most paragraphs for easier reading; accepted for publication in APL