Nanoscale Field-Effect Transistors: An Ultimate Size Analysis
凝聚态物理
2009-10-30 v2
摘要
We have used a simple, analytically solvable model to analyze the characteristic s of dual-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with 10-nm-scale channel length L. The model assumes ballistic dynamics of 2D electrons in an undoped channel between highly doped source and drain. When applied to silicon n-MOSFETs, calculations show that the voltage gain (necessary for logic applications) drops sharply at L ~ 10 nm, while the conductance modulation remains sufficient for memory applications until L ~ 4 nm.
引用
@article{arxiv.cond-mat/9706026,
title = {Nanoscale Field-Effect Transistors: An Ultimate Size Analysis},
author = {F. G. Pikus and K. K. Likharev},
journal= {arXiv preprint arXiv:cond-mat/9706026},
year = {2009}
}
备注
An erroneous number in estimates corrected, and paper shortened to fit APL size requirements