在SuperCDMS HVeV声子探测探测器中测量碰撞电离与电荷俘获概率
仪器与探测器
2020-02-19 v4
摘要
一个0.93克、 cm的SuperCDMS硅HVeV探测器在30 mK下运行，通过室温脉冲激光器经光纤耦合至低温恒温器，以1.91 eV光子照射。探测器在多种特定工作条件下的响应被用于研究高纯硅衬底中的探测器漏电流、电荷俘获和碰撞电离。测得探测器中电荷载流子发生电荷俘获（0.713 0.093%）或引起碰撞电离（1.576 0.110%）的概率，在 140 V的衬底偏压下，几乎与偏置极性和电荷载流子类型（电子或空穴）无关。
引用
@article{arxiv.1910.02162,
title = {Measuring the Impact Ionization and Charge Trapping Probabilities in SuperCDMS HVeV Phonon Sensing Detectors},
author = {F. Ponce and W. Page and P. L. Brink and B. Cabrera and M. Cherry and C. Fink and N. Kurinsky and R. Partridge and M. Pyle and B. Sadoulet and B. Serfass and C. Stanford and S. L. Watkins and S. Yellin and B. A. Young},
journal= {arXiv preprint arXiv:1910.02162},
year = {2020}
}
备注
4 pages, 4 figures