ILC CCD顶点探测器的辐射硬度
仪器与探测器
2009-11-13 v1
摘要
报告了原型CCD芯片电荷转移效率的详细模拟结果。通过检查导带底以下0.17 eV和0.44 eV两个电子陷阱能级，研究了未来加速器上运行的粒子探测器中辐射损伤的影响。使用ISE-TCAD DESSIS程序的模拟与0.17 eV能级的解析模型之间发现了良好的一致性。预测最佳工作温度约为250 K，此时陷阱的影响最小，这大致与读出频率无关。这项工作是在国际直线对撞机（ILC）项目框架内的直线对撞机味识别（LCFI）合作中进行的。
引用
@article{arxiv.physics/0611272,
title = {Radiation Hardness of CCD Vertex Detectors for the ILC},
author = {Andre Sopczak and Khaled Bekhouche and Chris Bowdery and Chris Damerell and Gavin Davies and Lakhdar Dehimi and Tim Greenshaw and Michal Koziel and Konstantin Stefanov and Tim Woolliscroft and Steve Worm},
journal= {arXiv preprint arXiv:physics/0611272},
year = {2009}
}
备注
7 pages, 10 figures. Presented at the IEEE 2006 Nuclear Science Symposium, San Diego, USA, and the 10th Topical Seminar on Innovative Particle and Radiation Detectors (IPRD06), 2006, Siena, Italy