Superconducting charge sensor coupled to an electron layer in silicon
Abstract
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as an additional gate electrode. We study the reliability of the electron sensor in different device configurations and the suitability of various operation modes for error detection in electron pumping experiments. As a result, we obtain a charge detection bandwidth of 5.87 kHz with unity signal to noise ratio at 300 mK bath temperature.
Keywords
Cite
@article{arxiv.1909.11976,
title = {Superconducting charge sensor coupled to an electron layer in silicon},
author = {Máté Jenei and Ruichen Zhao and Kuan Y. Tan and Tuomo Tanttu and Kok W. Chan and Yuxin Sun and Vasilii Sevriuk and Fay Hudson and Alessandro Rossi and Andrew Dzurak and Mikko Möttönen},
journal= {arXiv preprint arXiv:1909.11976},
year = {2019}
}
Comments
7 pages, 6 figures