表面栅控 InSb 量子阱单电子晶体管
介观与纳米尺度物理
2009-11-13 v1
摘要
本文报道了表面栅控 InSb/AlInSb 量子阱结构中的单电子充电效应。由于具有大的 g 因子和轻的有效质量，与更常用的材料（如 GaAs）相比，该材料在量子信息处理器件方面具有显著优势。然而，材料和器件技术的差异带来了重大的加工挑战。本文考虑了简单的库仑阻塞和量子化限制模型，以解释在这些结构中观察到的电导振荡。研究发现，充电能与单粒子态的能谱相当。
引用
@article{arxiv.0704.3897,
title = {A Surface-Gated InSb Quantum Well Single Electron Transistor},
author = {J. M. S. Orr and P. D. Buckle and M. Fearn and C. J. Storey and L. Buckle and T. Ashley},
journal= {arXiv preprint arXiv:0704.3897},
year = {2009}
}
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