Single-electron transistor effect in a two-terminal structure
介观与纳米尺度物理
2009-10-30 v1
摘要
A peculiarity of the single-electron transistor effect makes it possible to observe this effect even in structures lacking a gate electrode altogether. The proposed method can be useful for experimental study of charging effects in structures with an extremely small central island confined between tunnel barriers like a nanometer-sized quantum dot or a macromolecule probed with a tunneling microscope), where it is impossible to provide a gate electrode for control of the tunnel current.
引用
@article{arxiv.cond-mat/9711311,
title = {Single-electron transistor effect in a two-terminal structure},
author = {S. V. Vyshenski},
journal= {arXiv preprint arXiv:cond-mat/9711311},
year = {2009}
}
备注
5 pages, 2 figures