硅/硅锗二维电子气量子点中的库仑阻塞
材料科学
2009-11-10 v2
摘要
我们报道了在调制掺杂的硅/硅锗异质结构中单电子晶体管的制备与电学表征。该量子点通过电子束光刻及随后的反应离子刻蚀制备而成。通过在量子点平面内横向定义的侧栅极来调控量子点势与电子密度。低温测量显示了库仑阻塞现象，其单电子充电能量为 3.2 meV。
引用
@article{arxiv.cond-mat/0404399,
title = {Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot},
author = {L. J. Klein and K. A. Slinker and J. L. Truitt and S. Goswami and K. L. M. Lewis and S. N. Coppersmith and D. W. van der Weide and Mark Friesen and R. H. Blick and D. E. Savage and M. G. Lagally and Charles Tahan and Robert Joynt and M. A. Eriksson and J. O. Chu and J. A. Ott and P. M. Mooney},
journal= {arXiv preprint arXiv:cond-mat/0404399},
year = {2009}
}
备注
Typos corrected; to appear in Appl. Phys. Lett