杂质对拓扑绝缘体Bi2Te3中弱反局域化效应的影响
介观与纳米尺度物理
2011-04-25 v4 无序系统与神经网络
摘要
我们研究了低温下拓扑绝缘体Bi2Te3薄膜中的弱反局域化(WAL)效应。在倾斜磁场依赖的磁导率中揭示了与表面载流子相关的二维WAL效应。我们的数据表明，观察到的WAL对薄膜表面沉积的非磁性Au杂质具有鲁棒性。但磁性Fe杂质的沉积会淬灭WAL，因为Fe杂质破坏了拓扑表面态的π贝里相位。5 nm Bi2Te3薄膜的磁导率数据表明，随着Fe杂质的沉积，观察到了从辛类到幺正类的交叉。
引用
@article{arxiv.1008.0141,
title = {Impurity effect on weak anti-localization in the topological insulator Bi2Te3},
author = {Hong-Tao He and Gan Wang and Tao Zhang and Iam-Keong Sou and George K. L. Wong and Jian-Nong Wang and Hai-Zhou Lu and Shun-Qing Shen and Fu-Chun Zhang},
journal= {arXiv preprint arXiv:1008.0141},
year = {2011}
}
备注
4 pages, 3 figures. Corresponding author email address: [email protected]