用于带电粒子径迹探测的0.20微米SOI技术像素传感器特性表征
仪器与探测器
2011-10-19 v1
摘要
本文介绍了采用OKI 0.2微米SOI技术集成在高阻衬底上、并具有多种用于电荷收集优化的像素单元版图的像素传感器的特性表征结果。该传感器使用短红外激光脉冲、X射线和200 GeVπ介子进行了测试。我们报告了电荷收集、粒子探测效率和单点分辨率的结果。
引用
@article{arxiv.1103.0881,
title = {Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking},
author = {Marco Battaglia and Dario Bisello and Devis Contarato and Peter Denes and Piero Giubilato and Serena Mattiazzo and Devis Pantano and Sarah Zalusky},
journal= {arXiv preprint arXiv:1103.0881},
year = {2011}
}
备注
15 pages, 11 figures, submitted to Nuclear Instruments and Methods A