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相关论文: The band structure of BeTe - a combined experiment…

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The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin…

The bulk band structure of the topological insulator \sbte~ is investigated by angle-resolved photoemission spectroscopy. Of particular interest is the dispersion of the uppermost valence band with respect to the topological surface state…

Three-dimensional band structure of unoccupied and occupied states of the prototype layered material TiTe2 is determined focusing on the GammaA line of the Brillouin zone. Dispersions and lifetimes of the unoccupied states, acting as the…

强关联电子 · 物理学 2009-11-11 V. N. Strocov , E. E. Krasovskii , W. Schattke , N. Barrett , H. Berger , D. Schrupp , R. Claessen

Complex materials encompassing different phases of matter can display new photoinduced metastable states differing from those attainable under equilibrium conditions. These states can be realized when energy is injected in the material…

Using angle-resolved photoemission spectroscopy (ARPES), we studied bulk and surface electronic band structures of narrow-gap semiconductor lead telluride (PbTe) thin films grown by molecular beam epitaxy both perpendicular and parallel to…

材料科学 · 物理学 2017-04-26 Zhenyu Ye , Shengtao Cui , Tianyu Shu , Songsong Ma , Yang Liu , Zhe Sun , Jun-Wei Luo , Huizhen Wu

A detailed investigation by one-step photoemission calculations of the GaN(0001)-(1x1) surface in comparison with recent experiments is presented in order to clarify its structural properties and electronic structure. The discussion of…

凝聚态物理 · 物理学 2009-10-31 T. Strasser , C. Solterbeck , F. Starrost , W. Schattke

Phase change alloys are used for non-volatile random access memories exploiting the conductivity contrast between amorphous and metastable, crystalline phase. However, this contrast has never been directly related to the electronic band…

FeSe${}_{0.45}$Te${}_{0.55}$ (FeSeTe) has recently emerged as a promising candidate to host topological superconductivity, with a Dirac surface state and signatures of Majorana bound states in vortex cores. However, correlations strongly…

The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface…

From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to…

介观与纳米尺度物理 · 物理学 2020-10-20 J. Gospodaric , V. Dziom , A. Shuvaev , A. A. Dobretsova , N. N. Mikhailov , Z. D. Kvon , E. G. Novik , A. Pimenov

Angle-resolved photoelectron spectroscopy is an extremely powerful probe of materials to access the occupied electronic structure with energy and momentum resolution. However, it remains blind to those dynamic states above the Fermi level…

A combined experimental and theoretical study of very-low-energy electron diffraction at the (0001) surface of 2H-NbSe2 is presented. Electron transmission spectra have been measured for energies up to 50 eV above the Fermi level with k||…

强关联电子 · 物理学 2009-11-07 E. E. Krasovskii , W. Schattke , V. N. Strocov , R. Claessen

The electronic structure of the cleaved perovskite (CH3NH3PbBr3) single crystal was studied in an ultra-high vacuum (UHV) system by angle-resolved photoemission spectroscopy (ARPES) and inverse photoelectron spectroscopy (IPES). Highly…

材料科学 · 物理学 2017-04-05 Congcong Wang , Benjamin R. Ecker , Yongli Gao , Haotong Wei , Jinsong Huang , Jian-Qiao Meng

IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance.The multiple close-to-degenerate valence bands in the electronic band structure has been one of the key factors contributing to the high…

The electronic structure of the unconventional superconductor UTe$_2$ was studied by resonant photoelectron spectroscopy (RPES) and angle-resolved photoelectron spectroscopy (ARPES) with soft X-ray synchrotron radiation. The partial…

The full set of high-energy spectroscopy measurements including X-ray photoelectron valence band spectra and soft X-ray emission valence band spectra of both components of FeSi (Fe K_beta_5, Fe L_alpha, Si K_beta_1,3 and Si L_2,3) are…

A novel Bloch-waves based one-step theory of photoemission is developed within the augmented plane wave formalism. Implications of multi-Bloch-wave structure of photoelectron final states for band mapping are established. Interference…

材料科学 · 物理学 2009-11-11 E. E. Krasovskii , V. N. Strocov , N. Barrett , H. Berger , W. Schattke , R. Claessen

We present results from Inverse photoemission spectroscopy in the isochromat mode, with angular resolution, from the clean Au(113) surface. To identify the origin of the different resonances we have performed first principles calculations…

材料科学 · 物理学 2009-10-31 Patricio Haeberle , Wladimir Ibanez , Rolando Esparza , Patricio Vargas

Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the…

By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large…

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