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ELECTRONIC STRUCTURE OF FeSi

mtrl-th 2009-10-28 v1 Materials Science
Authors: V. R. Galakhov , E. Z. Kurmaev , V. M. Cherkashenko , Yu. M. Yarmoshenko , S. N. Shamin , A. V. Postnikov , St. Uhlenbrock , M. Neumann , Z. W. Lu , Barry M. Klein , Zhu-Pei Shi
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Abstract

The full set of high-energy spectroscopy measurements including X-ray photoelectron valence band spectra and soft X-ray emission valence band spectra of both components of FeSi (Fe K_beta_5, Fe L_alpha, Si K_beta_1,3 and Si L_2,3) are performed and compared with the results of ab-initio band structure calculations using the linearized muffin-tin orbital method and linearized augmented plane wave method.

Keywords

electronic structure electronic structure of materials

Cite

@article{arxiv.mtrl-th/9505004,
  title  = {ELECTRONIC STRUCTURE OF FeSi},
  author = {V. R. Galakhov and E. Z. Kurmaev and V. M. Cherkashenko and Yu. M. Yarmoshenko and S. N. Shamin and A. V. Postnikov and St. Uhlenbrock and M. Neumann and Z. W. Lu and Barry M. Klein and Zhu-Pei Shi},
  journal= {arXiv preprint arXiv:mtrl-th/9505004},
  year   = {2009}
}

Comments

11 pages + 3 PostScript figures, RevTex3.0, to be published in J.Phys.:Cond.Matter

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