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Whether or not anomalies in the thermal conductivity in insulating cuprates can be attributed to antiferromagnetic order and magnons in a 2D Mott insulator remains an intriguing open question. To shed light on this issue, we investigate the…

强关联电子 · 物理学 2022-04-20 Wen O. Wang , Jixun K. Ding , Brian Moritz , Edwin W. Huang , Thomas P. Devereaux

We study a quantum dot connected to the bulk by single-mode junctions at almost perfect conductance. Although the average charge $e\langle N \rangle$ of the dot is not discrete, its spin remains quantized: $s=1/2$ or $s=0$, depending…

介观与纳米尺度物理 · 物理学 2009-10-31 L. I. Glazman , F. W. J. Hekking , A. I. Larkin

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

The scaling of the conductivity at the superfluid-insulator quantum phase transition in two dimensions is studied by numerical simulations of the Bose-Hubbard model. In contrast to previous studies, we focus on properties of this model in…

其他凝聚态物理 · 物理学 2009-11-11 Jurij Smakov , Erik Sorensen

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators $\kappa$-(ET)$_{2}$$X$ with $X =$ Cu[N(CN)$_{2}$]Cl and Cu$_{2}$(CN)$_{3}$. For…

强关联电子 · 物理学 2007-11-29 T. Sasaki , H. Oizumi , N. Yoneyama , N. Kobayashi , N. Toyota

Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a combinatorial molecular beam epitaxy system integrated with cryogenic scanning tunneling microscopy, we investigate the electronic structure of a modulation-doped…

强关联电子 · 物理学 2022-06-22 Yan-Ling Xiong , Jia-Qi Guan , Rui-Feng Wang , Can-Li Song , Xu-Cun Ma , Qi-Kun Xue

Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…

强关联电子 · 物理学 2013-05-28 Florian C. Sabou , Natalie Bodington , J. B. Marston

If a material with an odd number of electrons per unit cell turns out to be insulating, Mott localisation may be invoked as an explanation. This is widely accepted for the layered compound 1T-TaS2, which has a low-temperature insulating…

强关联电子 · 物理学 2020-06-24 C. J. Butler , M. Yoshida , T. Hanaguri , Y. Iwasa

We interpret the recent observation of a zero-bias anomaly in spin-1 quantum dots in terms of an underscreened Kondo effect. Although a spin-1 quantum dots are expected to undergo a two-stage quenching effect, in practice the log normal…

介观与纳米尺度物理 · 物理学 2009-11-10 A. Posazhennikova , P. Coleman

The question if a Mott insulator and a band insulator are fundamentally different has been the matter of intensive research recently. Here we consider a simple model which allows by tuning one parameter to go continously from a Mott…

强关联电子 · 物理学 2009-11-11 Andreas Fuhrmann , David Heilmann , Hartmut Monien

We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the…

介观与纳米尺度物理 · 物理学 2009-10-31 M. Hilke , D. Shahar , S. H. Song , D. C. Tsui , Y. H. Xie , M. Shayegan

We study possible charge instabilities in doped Mott insulators by employing the two-dimensional t-J model with a positive value of the next nearest-neighbor hopping integral t' on a square lattice, which is applicable to electron-doped…

超导电性 · 物理学 2014-12-04 Matias Bejas , Andres Greco , Hiroyuki Yamase

There are two classes of Mott insulators in nature, distinguished by their responses to weak doping. With increasing chemical potential, Type I Mott insulators undergo a first order phase transition from the undoped to the doped phase. In…

强关联电子 · 物理学 2009-11-07 Dung-Hai Lee , Steven A. Kivelson

We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under…

介观与纳米尺度物理 · 物理学 2007-05-23 C. S. Tang , Y. H. Tan , C. S. Chu

Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…

强关联电子 · 物理学 2013-01-11 G. Sordi , P. Sémon , K. Haule , A. -M. S. Tremblay

Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSL). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the Mott state in monolayer 1T-NbSe2, an electronic…

介观与纳米尺度物理 · 物理学 2021-09-08 Zhen-Yu Liu , Shuang Qiao , Qiao-Yin Tang , Zi-Heng Ling , Wen-Hao Zhang , Hui-Nan Xia , Xin Liao , Wen-Hao Mao , Jing-Tao Lü , Bing Huang , Ying-Shuang Fu

The renormalization of the magnetic field penetration depth $\lambda$ owing to the electron-electron correlation is discussed with its application to high-$T_{\rm c}$ cuprates. The formula for the current carried by quasiparticle with the…

强关联电子 · 物理学 2009-11-07 Takanobu Jujo

Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of…

In this paper we explore the incommensurate spatial modulation of spin-spin correlations as the intrinsic property of the doped Mott insulator, described by the $t-J$ model. We show that such an incommensurability is a direct manifestation…

强关联电子 · 物理学 2009-10-31 Z. Y. Weng , D. N. Sheng , C. S. Ting

A systematic theory of the conductance measurements of non-invasive (weak probe) scanning gate microscopy is presented that provides an interpretation of what precisely is being measured. A scattering approach is used to derive explicit…

介观与纳米尺度物理 · 物理学 2013-07-12 C. Gorini , R. A. Jalabert , W. Szewc , S. Tomsovic , D. Weinmann