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The quantum-confined Stark effect in InAs/In(Ga)As quantum dots (QDs) using non-intentionally doped and p-doped QD barriers was investigated to compare their performance for use in optical modulators. The measurements indicate that the…

介观与纳米尺度物理 · 物理学 2022-05-20 Joe Mahoney , Mingchu Tang , Huiyun Liu , Nicolás Abadía

Employing Nernst-Einstein decomposition $\sigma=e^2\chi_c D$ of the conductivity $\sigma$ onto charge susceptibility (compressibility) $\chi_c$ and diffusion constant $D$, we argue that the bad-metallic behavior of $\sigma$ in the regime of…

强关联电子 · 物理学 2017-02-01 Jure Kokalj

We present neutron scattering measurements on single crystals of lightly doped $La_{2-x}Ba_{x}CuO_{4}$, with $0 \leq x \leq? 0.035$. These reveal the evolution of the magnetism in this prototypical doped Mott insulator from a three…

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

The kinetic features of holes (electrons) in the Hubbard model are studied using a variational Monte Carlo method. In doped Mott insulators (U>U_co), holes are classified, in the sense of conduction, into two categories: (i) The holes…

强关联电子 · 物理学 2012-11-28 H. Yokoyama , S. Tamura , K. Kobayashi , M. Ogata

We report a theoretical investigation on the conductance and its fluctuation of three-dimensional topological insulators (3D TI) in $Bi_2Se_3$ and $Sb_2Te_3$ in the presence of disorders. Extensive numerical simulations are carried out. We…

介观与纳米尺度物理 · 物理学 2011-10-19 Lei Zhang , Jianing Zhuang , Yanxia Xing , Jian Wang

A key open issue in condensed matter physics is how quantum and classical correlations emerge in an unconventional superconductor from the underlying normal state. We study this problem in a doped Mott insulator with information theory…

强关联电子 · 物理学 2022-03-01 C. Walsh , M. Charlebois , P. Sémon , G. Sordi , A. -M. S. Tremblay

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

We study the effect of umklapp scattering on the magnetic-field-induced spin-density-wave (FISDW) phases which are experimentally observed in the quasi-one-dimensional organic conductors of the Bechgaard salts family. Within the framework…

凝聚态物理 · 物理学 2009-10-31 N. Dupuis , V. M. Yakovenko

We introduce the concept that there are two generic classes of Mott insulators in nature. They are distinguished by their responses to weak doping. Doped charges form cluster (i.e. distribute inhomogeneously) in type I Mott insulators while…

超导电性 · 物理学 2007-05-23 Dung-Hai Lee

The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…

介观与纳米尺度物理 · 物理学 2009-11-10 Hwayong Noh , M. P. Lilly , D. C. Tsui , J. A. Simmons , L. N. Pfeiffer , K. W West

We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the…

强关联电子 · 物理学 2023-03-14 E. Z. Kuchinskii , N. A. Kuleeva , M. V. Sadovskii , D. I. Khomskii

The Gutzwiller wave function for a strongly correlated model can, if supplemented with a long-range Jastrow factor, provide a proper variational description of Mott insulators, so far unavailable. We demonstrate this concept in the…

强关联电子 · 物理学 2009-11-10 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella , Erio Tosatti

A method is proposed for studying wave and particle transport in disordered waveguide systems of dimension higher than unity by means of exact one-dimensionalization of the dynamic equations in the mode representation. As a particular case,…

无序系统与神经网络 · 物理学 2013-01-31 Yu. V. Tarasov

Fundamental topological phenomena in condensed matter physics are associated with a quantized electromagnetic response in units of fundamental constants. Recently, it has been predicted theoretically that the time-reversal invariant…

强关联电子 · 物理学 2018-11-26 Joseph Maciejko , Xiao-Liang Qi , H. Dennis Drew , Shou-Cheng Zhang

A Mott insulator sometimes induces unconventional superconductivity in its neighbors when doped and/or pressurized. Because the phase diagram should be strongly related to the microscopic mechanism of the superconductivity, it is important…

A central question in the high temperature cuprate superconductors is the fate of the parent Mott insulator upon charge doping. Here we use scanning tunneling microscopy to investigate the local electronic structure of lightly doped cuprate…

超导电性 · 物理学 2017-02-21 Peng Cai , Wei Ruan , Yingying Peng , Cun Ye , Xintong Li , Zhenqi Hao , Xingjiang Zhou , Dung-Hai Lee , Yayu Wang

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

We calculate the conductance through a single quantum dot coupled to metallic leads, modeled by the spin 1/2 Anderson model. We adopt the finite-U extension of the noncrossing approximation method. Our results are in good agreement with…

强关联电子 · 物理学 2007-05-23 D. Gerace , E. Pavarini , L. C. Andreani