相关论文: Quantized Conductance of One-Dimensional Doped Mot…
Energy spectrum of electrons (holes) doped into a two-dimensional antiferromagnetic insulator is quantized in an external magnetic field of arbitrary direction. A peculiar dependence of de Haas-van Alphen (dHvA) or Shubnikov-de Haas (SdH)…
We study the differential conductance, spectral density and magnetization, for a quantum dot coupled to two conducting leads as a function of bias voltage, magnetic field and temperature. The system is modeled with the Anderson model solved…
We calculate magnetization in magnetically doped semiconductors assuming a local exchange model of carrier-mediated ferromagnetic mechanism and using a number of complementary theoretical approaches. In general, we find that the results of…
The conductance G of a pair of single-channel point contacts in series, one of which is a spin filter, increases from 1/2 to 2/3 x e^2/h with more and more spin-flip scattering. This excess conductance was observed in a quantum dot by…
We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…
Transport in an ideal two-dimensional quantum spin Hall device is dominated by the counterpropagating edge states of electrons with opposite spins, giving the universal value of the conductance, $2e^2/h$. We study the effect on the…
In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…
The Mott-insulator \kappa-(BEDT-TTF)_2Cu_2(CN)_3 is the prime candidate of a quantum spin liquid with puzzling magnetic properties. Our THz and infrared investigations reveal that also the charge dynamics does not follow the expectations…
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a…
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with…
Charge dynamics of (Ti1-xVx)2O3 with x=0-0.06 has been investigated by measurements of charge transport and optical conductivity spectra in a wide temperature range of 2-600K with the focus on the thermally and doping induced…
We study the Kondo effect in a model system of a quantum dot embedded in an Aharanov-Bohm ring connected to two leads. By transforming to the scattering basis of the direct inter-lead tunneling, we are able to describe precisely how the…
The dynamics of charge carriers close to the Mott transition is explored theoretically and experimentally in the quasi two-dimensional organic charge-transfer salt $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br$_x$Cl$_{1-x}$, with varying Br…
We study two body dipolar scattering with one dimension of confinement. We include the effects of confinement by expanding this degree of freedom in harmonic oscillator states. We then study the properties of the resulting multi-channel…
We examine an effect of acoustic phonon scattering on an electric conductivity of single-component molecular conductor [Pd(dddt)$_2$] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band by applying the previous…
We calculate the density of states in the half-filled Hubbard model on a Bethe lattice with infinite connectivity. Based on our analytical results to second order in $t/U$, we propose a new `Fixed-Energy Exact Diagonalization' scheme for…
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting…
We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…
How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…
We reconsider the holographic model featuring a superconducting dome on the temperature-doping phase diagram with a modified view on the role of the two charges. The first type charge with density $\rho_{A}$ make the Mott insulator, and the…