相关论文: Hall Resistivity in Ferromagnetic Manganese-Oxide …
The transport and magnetic properties in ferromagnetic manganese-oxide thin films are studied based on the model of the coupling between the mobile d-electrons and the core spins in Mn ions. The spontaneous magnetization and the resistivity…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K…
Non-monotonic dependence of anomalous Hall resistivity on temperature and magnetization, including a sign change, was observed in Fe/Gd bilayers. To understand the intriguing observations, we fabricated the Fe/Gd bilayers and single layers…
We find that the Hall effect resistivity ($\rho_{xy}$) of thin films of \lsmo\ varies as a function of the angle $\theta$ between the applied magnetic field and the film normal as $\rho_{xy}=a\cos \theta + b\cos 3\theta$, where $|b|$…
Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
By studying the Hall effect in a series of low resistivity Ga1-xMnxAs samples, accurate values for the hole density p, Mn concentration x, and Curie temperature Tc are obtained over the range 0.015=<x=<0.08. The hole density corresponds to…
The Hall resistivity and magnetization have been investigated in the ferromagnetic state of the bilayered manganite La(2-2x)Sr(1+2x)Mn2O7 (x=0.36). The Hall resistivity shows an increase in both the ordinary and anomalous Hall coefficients…
Near the superconducting phase transition, fluctuations significantly modify the electronic transport properties. Here we study the fluctuation corrections to the Hall conductivity in disordered films, extending previous derivations to a…
Mn$_{3-x}$Ga (x = 0.1, 0.4, 0.7) thin films on MgO and SrTiO$_3$ substrates were investigated with magnetic anisotropy perpendicular to the film plane. An anomalous Hall-effect was observed for the tetragonal distorted lattice in the…
Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-d have been carried out to investigate the relationship between the magnetic structure and the anomalous Hall resistivity rH. The hysteretic behavior of the…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick…
The Hall resistivity, magnetoresistance, and magnetization of La_{1-x}Ca_{x}CoO_{3} epitaxial films with x between 0.25 and 0.4 grown on lanthanum aluminate were measured in fields up to 7 T. The x=1/3 film, shows a reentrant metal…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn…
We have investigated the temperature and magnetic field dependence of the Hall coefficient of two well-characterized superconducting MgB$_2$ films (T$_{c0}$=38.0 K) in both the normal and superconducting states. Our results show that the…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
The Hall effect is investigated for eight superconducting Fe(Se_0.5_Te_0.5_) thin films grown on MgO and LaSrAlO_4_ substrates with different transition temperatures (T_c_). The normal Hall coefficients (R_H_) have positive values with…
Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…