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相关论文: Hall Resistivity in Ferromagnetic Manganese-Oxide …

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With unusually slow and high-resolution sweeps of magnetic field, strong, ultra-narrow (width down to $100 {\rm \mu T}$) resistance peaks are observed in the regime of breakdown of the quantum Hall effect. The peaks are dependent on the…

介观与纳米尺度物理 · 物理学 2009-10-31 A. M. Song , P. Omling

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH)…

By using a two-step method, we successfully synthesized the iron based new superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs. The Hall effect and magnetoresistance were measured in wide temperature region. A negative Hall coefficient R_H has been…

超导电性 · 物理学 2008-09-08 Huan Yang , Xiyu Zhu , Lei Fang , Gang Mu , Hai-Hu Wen

The effect of thermal fluctuation on the spin-chirality-induced anomalous Hall effect in itinerant magnets is theoretically studied. Considering a triangular-lattice model as an example, we find that a multiple-spin scattering induced by…

强关联电子 · 物理学 2019-09-04 Yasuyuki Kato , Hiroaki Ishizuka

We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these…

Low temperature magnetotransport measurements and far infrared transmission spectroscopy are reported in molecular beam epitaxial grown two-dimensional hole systems confined in strained InAs quantum wells with magnetic impurities in the…

材料科学 · 物理学 2015-05-14 U. Wurstbauer , S. Knott , C. G. v. Westarp , N. Mecking , K. Rachor , D. Heitmann , W. Wegscheider , W. Hansen

We show that the Anomalous Hall Effect (AHE) observed in Colossal Magnetoresistance Manganites is a manifestation of Berry phase effects caused by carrier hopping in a non-trivial spin background. We determine the magnitude and temperature…

强关联电子 · 物理学 2009-10-31 Jinwu Ye , Yong Baek Kim , A. J. Millis , P. Majumdar , Z. Tesanovic

We present magnetoresistance measurements performed on ultrathin films of amorphous Ni and Fe. In these films the Curie temperature drops to zero at small thickness, making it possible to study the effect of ferromagnetism on localization.…

介观与纳米尺度物理 · 物理学 2015-05-19 Noa Kurzweil , Eugene Kogan , Aviad Frydman

In the normal state of high-Tc cuprates, the Hall coefficient shows remarkable temperature dependence, and its absolute value is enhanced in comparison with that value simply estimated on the basis of band structure. It has been recognized…

超导电性 · 物理学 2009-10-31 Kazuki Kanki , Hiroshi Kontani

We use spin-density-functional theory to study recently reported hysteretic magnetoresistance \rho_{xx} spikes in Mn-based 2D electron gases [Jaroszy\'{n}ski et al. Phys. Rev. Lett. (2002)]. We find hysteresis loops in our calculated Landau…

介观与纳米尺度物理 · 物理学 2007-07-13 Henrique J. P. Freire , J. Carlos Egues

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong…

Taking Mn doped Germanium as an example, we evoke the consideration of a two-band-like conduction in diluted ferromagnetic semiconductor (FMS). The main argument for claiming Ge:Mn as a FMS is the occurrence of the anomalous Hall effect…

材料科学 · 物理学 2009-10-28 Shengqiang Zhou , Danilo Buerger , Manfred Helm , Heidemarie Schmidt

We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal|ferromagnetic insulator bilayer. It depends on the angle between current and magnetization directions identically to the "spin Hall…

介观与纳米尺度物理 · 物理学 2015-06-22 Vahram L. Grigoryan , Wei Guo , Gerrit E. W. Bauer , Jiang Xiao

The Hall resistivity, electrical resistivity and magnetization of single crystals of the tetragonal ferromagnet Yb14MnSb11 are reported as a function of the direction of the current, I, and magnetic field, H with respect to the principal…

强关联电子 · 物理学 2009-11-13 Brian C. Sales , Rongying Jin , David Mandrus

The glassy response of thin films of La0.8Ca0.2MnO3 to external magnetic and gated electrostatic fields in a field-effect geometry has been studied at low temperatures. A hierarchical response with irreversible memory effects, non-ergodic…

强关联电子 · 物理学 2013-05-29 A. Bhattacharya , M. Eblen-Zayas , N. E. Staley , A. L. Kobrinskii , A. M. Goldman

We report on the observation of a large topological Hall effect (THE) over a wide temperature region in a geometrically frustrated Fe3Sn2 magnet with a kagome-bilayer structure. We found that the magnitude of the THE resistivity increases…

材料科学 · 物理学 2019-11-28 Hang Li , Bei Ding , Jie Chen , Zefang Li , Zhipeng Hou , Enke Liu , Hongwei Zhang , Xuekui Xi , Guangheng Wu , Wenhong Wang

Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits…

We propose mechanisms for the spin Hall effect in metallic systems arising from the coupling between conduction electrons and local magnetic moments that are dynamically fluctuating. Both a side-jump-type mechanism and a…

强关联电子 · 物理学 2019-11-11 Satoshi Okamoto , Takeshi Egami , Naoto Nagaosa

Ferromagnetic behaviour has been observed experimentally for the first time in nanostructured Manganese. Ultrathin ($\sim$ 0.6 nm) Manganese nanosheets have been synthesized inside the two dimensional channels of sol-gel derived Na-4 mica.…

介观与纳米尺度物理 · 物理学 2012-05-08 Sreemanta Mitra , Amrita Mandal , Anindya Datta , Sourish Banerjee , Dipankar Chkaravorty

Magnetic materials hosting topological spin textures like magnetic skyrmion exhibit nontrivial Hall effect, namely, topological Hall effect (THE). In this study, we demonstrate the emergence of THE in thin films of half-metallic perovskite…

强关联电子 · 物理学 2018-07-03 M. Nakamura , D. Morikawa , X. Z. Yu , F. Kagawa , T. Arima , Y. Tokura , M. Kawasaki
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