相关论文: Hall Resistivity in Ferromagnetic Manganese-Oxide …
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were…
Hall resistance $R_{\textrm{xy}}$ is commonly suggested to be linear-in-magnetic-field $B$, provided the field is small. We argue here that at low temperatures this linearity is broken due to weak localization/antilocalization phenomena in…
The temperature dependence of resistivity, magnetization and electron-spin resonance of the $\alpha- MnS $ single crystal were measured in temperature range of $5 K < T < 550 K$. Magnetization hysteresis in applied magnetic field up to 0.7…
The magnetization as a function of magnetic field showed hysteretic behavior at room temperature. According to the temperature dependence of the magnetization, the Curie temperature $(T_{C})$ is higher than 350 K. Ferromagnetic Mn-doped tin…
We theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when…
The magnon dispersion of ferromagnetic SrRuO$_3$ was studied by inelastic neutron scattering experiments on single crystals as function of temperature. Even at low temperature the magnon modes exhibit substantial broadening pointing to…
In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant…
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…
The Hall conductivities of HgBa_{2}CaCu_{2}O_{6+\delta}and HgBa_{2}Ca_{2}Cu_{3}O_{8+\delta} thin films are investigated for a magnetic field parallel to the c axis. The mixed-state Hall conductivity for these compounds is well described by…
In a heavy fermion system, there exists the anomalous Hall effect caused by localized $f$-orbital freedom, in addition to the normal Hall effect due to the Lorentz force. In 1994, we found that the Hall coefficient caused by the anomalous…
Despite a considerable effort aiming at elucidating the nature of ferromagnetism in ZnO-based magnetic semiconductor, its origin still remains debatable. Although the observation of above room temperature ferromagnetism has been reported…
Magnetic and magneto-transport properties of manganese nitride films grown by molecular beam epitaxy have been investigated. Due to the mixed ferrimagnetic (FI) phase (${\epsilon}$-phase with TFI ~ 738 K) and the antiferromagnetic phase…
A new scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor (Ga,Mn)As is examined in detail. We find that magnetic features seen in zero-field cooled and field cooled magnetizations are not…
By revealing an underlying relation between the Dzyaloshinskii-Moriya interaction (DMI) and the scalar spin chirality, we develop the theory of magnon thermal Hall effects in antiferromagnetic systems. The dynamic fluctuation of the scalar…
The Hall and magnetoresistance of a two dimensional electron gas subjected to a magnetic field barrier parallel to the current direction is studied as function of the applied perpendicular magnetic field. The recent experimental results of…
Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerant ferromagnetism upto 230 K. Here, we study aspects of scattering mechanism in Fe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effect measurements.…
The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity {\rho}xy and the longitudinal resistivity {\rho}xx follow power law scaling {\rho}xy =…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
The electrical resistance of magnetic domain walls in ferromagnetic metallic manganites can be enhanced to 10-12 Ohm.m2 by patterning nanoconstrictions [J. Appl. Phys. 89, 6955 (2001)]. We show equally large enhancements in a phase…
Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…