相关论文: High-Performance, Hysteresis-Free Carbon Nanotube …

We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…

High performance p- and n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) are obtained by using high and low work function metals, Pd and Al as source/drain (S/D) electrodes respectively. Ohmic contacts made to…

Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3…

Carbon nanotube field-effect transistors (FETs) with passivated coaxial gate structures have been fabricated after growth of contacted suspended single wall nanotubes (SWNTs) and subsequent coating with gate dielectrics. Electron…

A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique…

Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic…

We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon…

Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting…

Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain junction and thus can be easier to implement in aggressive…

High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped…

Carbon nanotube field-effect transistors (CNT FETs) have been proposed as possible building blocks for future nano-electronics. But a challenge with CNT FETs is that they appear to randomly display varying amounts of hysteresis in their…

Short channel (~80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-k gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ~ 1.6 nm…

We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain…

Field electron emission (FE) from a structure-defined single-walled carbon nanotube (SWNT) was observed experimentally. A series of observations of the same SWNT by scanning electron microscopy, field emission microscopy and transmission…

Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…

Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device…

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

Carbon Nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nano-scaled transistors. This paper aims at analyzing a trade-off between device performance and device size of CNT…

We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and…

Most carbon nanotube field-effect transistors (CNTFETs) directly attach metal source/drain contacts to an intrinsic nanotube channel. When the gate oxide thickness is reduced, such transistors display strong ambipolar conduction, even when…