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相关论文: Much Ado about Zeros: The Luttinger Surface and Mo…

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One of the early triumphs of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states correctly predicts the character of most materials this…

强关联电子 · 物理学 2015-09-02 S. Friedemann , H. Chang , M. B. Gamża , P. Reiss , X. Chen , P. Alireza , W. A. Coniglio , D. Graf , S. Tozer , F. M. Grosche

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by…

强关联电子 · 物理学 2009-04-27 Kenji Yonemitsu

We investigate the low energy properties of a correlated metal in the proximity of a Mott insulator within the Hubbard model in two dimensions. We introduce a new version of the Cellular Dynamical Mean Field Theory using cumulants as the…

强关联电子 · 物理学 2009-11-11 Tudor D. Stanescu , Gabriel Kotliar

Topology without quasiparticles has emerged as a key framework for understanding Mott insulators, where Green's-function zeros encode nontrivial topological structure. Yet, experimental detection of these zeros represents a challenge. Using…

强关联电子 · 物理学 2026-03-03 Sayan Mitra , Fang Xie , Marek Kolmer , Qimiao Si , Chandan Setty

The phenomenon of Mott insulation involves the localization of itinerant electrons due to strong local repulsion. Upon doping, a pseudogap (PG) phase emerges - marked by selective gapping of the Fermi surface without conventional symmetry…

Because Fermi liquids are inherently non-interacting states of matter, all electronic levels below the chemical potential are doubly occupied. Consequently, the simplest way of breaking Fermi liquid theory is to engineer a model in which…

强关联电子 · 物理学 2022-03-23 Edwin W. Huang , Gabriele La Nave , Philip W. Phillips

We expand on our earlier work (cond-mat/0612130, Phys. Rev. Lett. {\bf 99}, 46404 (2007)) in which we constructed the exact low-energy theory of a doped Mott insulator by explicitly integrating (rather than projecting) out the degrees of…

强关联电子 · 物理学 2009-11-13 Ting-Pong Choy , Robert G. Leigh , Philip Phillips , Philip D. Powell

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

We use bosonization methods to calculate the exact finite-temperature single-electron Green's function of a spinful Luttinger liquid confined by open boundaries. The corresponding local spectral density is constructed and analyzed in…

强关联电子 · 物理学 2009-10-30 Ann E. Mattsson , Sebastian Eggert , Henrik Johannesson

Luttinger's theorem constrains the particle density of interacting fermions through global properties of the single-particle Green's function, and its violation signals a breakdown of the identification between the quantized Hall response…

We derive a generalized Luttinger-Ward expression for the Free energy of a many body system involving a constrained Hilbert space. In the large $N$ limit, we are able to explicity write the entropy as a functional of the Green's functions.…

强关联电子 · 物理学 2007-05-23 P. Coleman , I. Paul , J. Rech

We consider the two-terminal conductance of a one-dimensional Mott insulator undergoing the commensurate-incommensurate quantum phase transition to a conducting state. We treat the leads as Luttinger liquids. At a specific value of…

介观与纳米尺度物理 · 物理学 2008-01-23 M. Garst , D. S. Novikov , Ady Stern , L. I. Glazman

Defying the traditional classification into metals and insulators, several materials simultaneously display metallic thermal properties and insulating electric behaviour, as if they hosted quasiparticles carrying entropy but not charge.…

强关联电子 · 物理学 2025-02-05 Andrea Blason , Ivan Pasqua , Michel Ferrero , Michele Fabrizio

We study single-particle excitations in the Mott insulator phase of a Bose gas in an optical lattice. The characteristic feature of the single-particle spectrum in the Mott insulator phase is the existence of an energy gap between the…

其他凝聚态物理 · 物理学 2009-11-10 S. Konabe , T. Nikuni , M. Nakamura

We investigate a hole-doped Mott insulator in a slab geometry using the dynamical cluster approximation. We show that the enhancement of the correlation strength at the surface results in the remarkable evolution of the layer-projected…

强关联电子 · 物理学 2025-11-05 Gregorio Staffieri , Michele Fabrizio

We analyze the role of spatial electronic correlations and, in particular, of the magnetic fluctuations in Mott insulators. A half-filled Hubbard model is solved at large strength of the repulsion U on a two-dimensional square lattice using…

强关联电子 · 物理学 2024-02-19 Evgeny A. Stepanov , Maria Chatzieleftheriou , Niklas Wagner , Giorgio Sangiovanni

The standard view is that at low energies Mott insulators exhibit only magnetic properties while charge degrees of freedom are frozen out as the electrons become localized by a strong Coulomb repulsion. We demonstrate that this is in…

强关联电子 · 物理学 2009-11-13 L. N. Bulaevskii , C. D. Batista , M. Mostovoy , D. Khomskii

Using dynamical mean-field theory and the non-crossing approximation as impurity solver, we study the response of a Mott insulator to strong dc electric fields. The breakdown of the Mott insulating state is triggered by field-induced…

强关联电子 · 物理学 2013-07-01 Martin Eckstein , Philipp Werner

A system of one-dimensional electrons interacting via a short-range potential described by Hubbard model is considered in the regime of strong coupling using the Bethe ansatz approach. We study its momentum distribution function at zero…

强关联电子 · 物理学 2022-03-31 O. Tsyplyatyev