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Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…

材料科学 · 物理学 2015-05-28 Roger Häusermann , Bertram Batlogg

Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest…

材料科学 · 物理学 2012-02-10 Nikolas A. Minder , Shimpei Ono , Zhihua Chen , Antonio Facchetti , Alberto F. Morpurgo

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline…

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…

强关联电子 · 物理学 2009-11-13 S. Fratini , A. F. Morpurgo , S. Ciuchi

A model describing the low density carrier state in an organic single crystal FET with high-$\kappa$ gate dielectrics is studied. The interplay between charge carrier coupling with inter-molecular vibrations in the bulk of the organic…

材料科学 · 物理学 2015-03-17 G. De Filippis , V. Cataudella , S. Fratini , S. Ciuchi

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap dominated p-type organic field-effect transistors (OFETs) has been investigated. It has been observed that the transfer of electrons into the…

材料科学 · 物理学 2015-06-25 M. F. Calhoun , C. Hsieh , V. Podzorov

Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic field-effect transistors. These effects are more prevalent in short channel…

其他凝聚态物理 · 物理学 2007-05-23 B. H. Hamadani , D. Natelson

In organic field effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers -that determines the device…

材料科学 · 物理学 2015-06-25 I. N. Hulea , S. Fratini , H. Xie , C. L. Mulder , N. N. Iossad , G. Rastelli , S. Ciuchi , A. F. Morpurgo

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET,…

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…

材料科学 · 物理学 2009-12-21 Wolfgang L. Kalb , Kurt Mattenberger , Bertram Batlogg

The latest field-effect transistors are entering the regime where quantum effects within the conduction channel can play a significant role because of the increasingly reduced dimensions. We investigate the effects of quantized states in…

介观与纳米尺度物理 · 物理学 2024-02-06 P. Xu , H. Luo

We study the effects of electrostatic gating on the lateral distribution of charge carriers in two dimensional devices, in a non-linear dielectric environment. We compute the charge distribution using the Thomas-Fermi approximation to model…

介观与纳米尺度物理 · 物理学 2020-03-05 Eylon Persky , Hyeok Yoon , Yanwu Xie , Harold Y. Hwang , Jonathan Ruhman , Beena Kalisky

We present a scaling theory of two-dimensional (2D) field effect transistors (FETs). For devices with channel thickness less than 4 nm, the device electrostatics is dominated by the physical gate oxide thickness and not the effective oxide…

介观与纳米尺度物理 · 物理学 2021-05-25 Saurabh V. Suryavanshi , Chris D. English , H. -S. P. Wong , Eric Pop

We analyze the effect of a gate on the conductance of molecules by separately evaluating the gate-induced polarization and the potential shift of the molecule relative to the leads. The calculations use ab initio density functional theory…

材料科学 · 物理学 2007-05-23 San-Huang Ke , Harold U. Baranger , Weitao Yang

Organic light emitting field effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light emitting diodes. However, these…

We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional…

Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…

材料科学 · 物理学 2009-11-11 D. Natelson , B. H. Hamadani , J. W. Ciszek , D. A. Corley , J. M. Tour

We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode…

材料科学 · 物理学 2009-11-10 R. Zeis , Ch. Kloc , K. Takimiya , Y. Kunugi , Y. Konda , N. Niihara , T. Otsubo

The effect of polarization rotation on the performance of metal oxide semiconductor field-effect transistors was investigated with a Landau-Ginzburg-Devonshire theory based model. In this analytical model, depolarization field, polarization…

材料科学 · 物理学 2015-07-06 Yubo Qi , Andrew M. Rappe
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