Single crystal field-effect transistors based on an organic selenium-containing semiconductor
材料科学
2009-11-10 v1
摘要
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
引用
@article{arxiv.cond-mat/0411207,
title = {Single crystal field-effect transistors based on an organic selenium-containing semiconductor},
author = {R. Zeis and Ch. Kloc and K. Takimiya and Y. Kunugi and Y. Konda and N. Niihara and T. Otsubo},
journal= {arXiv preprint arXiv:cond-mat/0411207},
year = {2009}
}