相关论文: Anomalous Spin Dephasing in (110) GaAs Quantum Wel…
Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the…
We study the electron spin relaxation in both symmetric and asymmetric GaAs/AlGaAs quantum wells (QWs) grown on (110) substrates in an external magnetic field B applied along the QW normal. The spin polarization is induced by circularly…
The electron spin dynamics is studied by time-resolved Kerr rotation in GaAs/AlGaAs quantum wells embedded in a negatively doped-intrinsic-positively doped structures grown on (111)A or (111)B-oriented substrates. In both cases the spin…
We investigate the electron spin dephasing in the presence of spin phase recovering by a serried $\pi$-pulse sequence in $n$-type (001) GaAs quantum wells in a wide range of temperature and density regimes. Our numerical calculation is…
We have studied spin dephasing in a high-mobility two-dimensional electron system (2DES), confined in a GaAs/AlGaAs quantum well grown in the [110] direction, using the resonant spin amplification (RSA) technique. From the characteristic…
Electron spin dynamics is investigated in n-i-n GaAs/AlGaAs coupled quantum wells. The electron spin dephasing time is measured as a function of an external electrical bias under resonant excitation of the 1sHH intrawell exciton using a…
We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be…
We investigated the spin dynamics of two-dimensional electrons in (001) GaAs/AlGaAs heterostructure using the time resolved Kerr rotation technique under a transverse magnetic field. The in-plane spin lifetime is found to be anisotropic…
Multi-subband effect on spin precession and spin dephasing in $n$-type GaAs quantum wells is studied with electron-electron and electron-phonon scattering explicitly included. The effects of temperature, well width and applied electric…
We have studied spin dephasing and spin diffusion in a high-mobility two-dimensional electron system, embedded in a GaAs/AlGaAs quantum well grown in the [110] direction, by a two-beam Hanle experiment. For very low excitation density, we…
Conduction electron spin lifetimes ($T_1$) and spin coherence times ($T_2$) are strongly modified in semiconductor quantum wells by electric fields. Quantitative calculations in GaAs/AlGaAs quantum wells at room temperature show roughly a…
Coherent electron spin dynamics in 10-nm-wide InGaAs/InAlAs quantum wells is studied from 10 K to room temperature using time-resolved Kerr rotation. The spin lifetime exceeds 1 ns at 10 K and decreases with temperature. By varying the…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
In time-resolved Faraday rotation experiments we have detected an inplane anisotropy of the electron spin-dephasing time (SDT) in an $n$--modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As single quantum well. The SDT was measured with magnetic…
We study the optically induced spin polarization, spin dephasing and diffusion in several high-mobility two-dimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental…
The spin relaxation time of electrons in GaAs and GaN are determined with a model that includes momentum scattering by phonons and ionized impurities, and spin scattering by the Elliot-Yafet, D'yakonov-Perel, and Bir-Aronov-Pikus…
The electron spin dynamics in multilayer GaAs/AlGaAs quantum wells, containing high-mobility dense two-dimensional electron gases, have been studied using time-resolved Kerr rotation and resonant spin amplification techniques. The electron…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…