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相关论文: Inhomogeneity in doped Mott insulator

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Junctions of doped Mott insulators offer a route to rectification at frequencies beyond the terahertz range. Mott insulators have strong electronic correlations and therefore short timescales for electron-electron scattering. It is this…

强关联电子 · 物理学 2013-05-28 Florian C. Sabou , Natalie Bodington , J. B. Marston

We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Z. Y. Weng

Layered perovskite iridates realize a rare class of Mott insulators that are predicted to be strongly spin-orbit coupled analogues of the parent state of cuprate high-temperature superconductors. Recent discoveries of pseudogap, magnetic…

强关联电子 · 物理学 2017-04-25 H. Chu , L. Zhao , A. de la Torre , T. Hogan , S. D. Wilson , D. Hsieh

The purpose of this paper is to discuss a phase diagram of hole-doped cuprates. Hole-doped cuprates have a very rich phase diagram as a function of doping. This is due to a charge inhomogeneity in CuO_2 planes: the charge distribution in…

超导电性 · 物理学 2007-05-23 A. Mourachkine

The search for semiconductors with high thermoelectric figure of merit has been greatly aided by theoretical modeling of electron and phonon transport, both in bulk materials and in nanocomposites. Recent experiments have studied…

强关联电子 · 物理学 2015-06-25 Subroto Mukerjee , J. E. Moore

We perform a thorough study of an extended Hubbard model featuring local and nearest-neighbor Coulomb repulsion. Using dynamical mean-field theory we investigated the zero temperature phase-diagram of this model as a function of the…

强关联电子 · 物理学 2017-03-15 K. J. Kapcia , S. Robaszkiewicz , M. Capone , A. Amaricci

Novel superconducting compounds such as the high Tc oxides are intrinsically inhomogeneous systems. An inhomogeneous structure is created by doping and the statistical nature of the distribution of dopants. Consequently, the critical…

材料科学 · 物理学 2009-11-11 Vladimir Kresin , Yurii N. Ovchinikov , Stuart A. Wolf

We study small systems of Mott insulating ultracold atoms under the influence of gauge potentials and spin-orbit couplings. We use second order perturbation theory in tunneling, derive an effective theory for the Mott insulators with one…

量子气体 · 物理学 2012-09-28 J. -P. Martikainen

Routes to enhance superconducting instability are explored for doped Mott insulators. With the help of insights for criticalities of metal-insulator transitions, geometrical design of lattice structure is proposed to control the…

强关联电子 · 物理学 2009-10-31 Masatoshi Imada , Masanori Kohno

In conventional metal superconductors such as aluminum, the large number of weakly bounded Cooper pairs become phase coherent as soon as they start to form. The cuprate high critical temperature ($T_c$) superconductors, in contrast, belong…

超导电性 · 物理学 2023-06-27 Shusen Ye , Changwei Zou , Hongtao Yan , Yu Ji , Miao Xu , Zehao Dong , Yiwen Chen , Xingjiang Zhou , Yayu Wang

Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…

强关联电子 · 物理学 2009-11-13 Takashi Oka , Hideo Aoki

In this study, we analyze the dielectric function of high-Tc cuprates as a function of doping level, taking into account the full energy band dispersion within the CuO$_2$ monolayer. In addition to the conventional two-dimensional (2D)…

超导电性 · 物理学 2024-11-21 V. M. Silkin , D. V. Efremov , M. Yu. Kagan

We study spin and charge dynamics of stripes in doped Mott insulators by considering a two-dimensional Hubbard model with N fermion flavors. For N =2 we recover the normal one-band model while for N -> infty a spin density wave mean-field…

强关联电子 · 物理学 2009-11-07 F. F. Assaad , V. Rousseau , F. Hebert , M. Feldbacher , G. G. Batrouni

This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

强关联电子 · 物理学 2008-02-15 S. Pankov , V. Dobrosavljevic

Over the past two decades, advances in computational algorithms have revealed a curious property of the two-dimensional Hubbard model (and related theories) with hole doping: the presence of close-in-energy competing ground states that…

超导电性 · 物理学 2019-11-07 Neil J. Robinson , Peter D. Johnson , T. Maurice Rice , Alexei M. Tsvelik

Recent ARPES measurements on the electron-doped cuprate Nd_{2-x}Ce_xCuO_4 can be interpreted in a mean field model of uniform doping of an antiferromagnet, with the Mott gap closing near optimal doping. Mode coupling calculations confirm…

超导电性 · 物理学 2017-08-23 R. S. Markiewicz

The parent compounds of the high-temperature cuprate superconductors are Mott insulators. It has been generally agreed that understanding the physics of the doped Mott insulators is essential to understanding the mechanism of high…

We study the effects of hole doping on one-dimensional Mott insulators with orbital degrees of freedom. We describe the system in terms of a generalized t-J model. At a specific point in parameter space the model becomes integrable in…

强关联电子 · 物理学 2009-01-08 J. Sirker , J. Damerau , A. Klümper

Understanding the extent and role of inhomogeneity is a pivotal challenge in the physics of cuprate superconductors. While it is known that structural and electronic inhomogeneity is prevalent in the cuprates, it has proven difficult to…