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相关论文: Inhomogeneity in doped Mott insulator

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Quantum antiferromagnets on geometrically frustrated lattices often allow a number of unusual paramagnetic ground states. The fate of these Mott insulators upon doping is an important issue that may shed some light on the high $T_c$ cuprate…

超导电性 · 物理学 2009-11-10 Chung-Hou Chung , Yong Baek Kim

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

We use determinant Quantum Monte Carlo simulations and exact diagonalization to explore insulating behavior in the Hubbard model with a bimodal distribution of randomly positioned local site energies. From the temperature dependence of the…

强关联电子 · 物理学 2007-07-10 N. Paris , A. Baldwin , R. T. Scalettar

This article reviews the effort to understand the physics of high temperature superconductors from the point of view of doping a Mott insulator. The basic electronic structure of the cuprates is reviewed, emphasizing the physics of strong…

强关联电子 · 物理学 2009-09-29 Patrick A. Lee , Naoto Nagaosa , Xiao-Gang Wen

We propose a unified approach for describing the carrier localization, metal-insulator transitions (MITs) and stripe formation in high-$T_c$ cuprates. The ground-state energy of a carrier interacting with a defect and with lattice…

超导电性 · 物理学 2010-08-16 S. Dzhumanov , O. K. Ganiev , Z. S. Khudayberdiev

One-dimensional Mott insulators can be described using the sine-Gordon model, an integrable quantum field theory that provides the low-energy effective description of several one-dimensional gapped condensed matter systems, including recent…

强关联电子 · 物理学 2024-04-25 Frederik Møller , Botond C. Nagy , Márton Kormos , Gábor Takács

The Mott insulating state formed from bosons is ubiquitous in solid He-4, cold atom systems, Josephson junction networks and perhaps underdoped high-Tc superconductors. We predict that close to the quantum phase transition to the…

强关联电子 · 物理学 2012-09-26 A. J. Beekman , J. Zaanen

We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of…

超导电性 · 物理学 2021-06-14 Haiwei Li , Shusen Ye , Jianfa Zhao , Changqing Jin , Yayu Wang

The Gutzwiller wave function for a strongly correlated model can, if supplemented with a long-range Jastrow factor, provide a proper variational description of Mott insulators, so far unavailable. We demonstrate this concept in the…

强关联电子 · 物理学 2009-11-10 Manuela Capello , Federico Becca , Michele Fabrizio , Sandro Sorella , Erio Tosatti

We report a Cu K-edge resonant inelastic x-ray scattering (RIXS) study of high-Tc cuprates. Momentum-resolved charge excitations in the CuO2 plane are examined from parent Mott insulators to carrier-doped superconductors. The Mott gap…

An orbital ordering, often observed in Mott insulators with orbital degeneracy, is usually supposed to disappear with doping, e.g. in the ferromagnetic metallic phase of manganites. We propose that the orbital ordering of a novel type may…

凝聚态物理 · 物理学 2016-08-31 Daniel Khomskii

A simple model is proposed as a possible explanation for the checkerboard pattern of modulations in the hole density observed in recent tunneling experiments on underdoped cuprates. Two assumptions are made; first, an enhanced hole density…

强关联电子 · 物理学 2009-11-11 T. M. Rice , Hirokazu Tsunetsugu

I introduce a doped two-dimensional quantum dimer model describing a doped Mott insulator and retaining the original Fermi statistics of the electrons. This model shows a rich phase diagram including a d-wave hole-pair unconventional…

强关联电子 · 物理学 2008-04-24 Didier Poilblanc

Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the Dynamical Mean Field Theory solution of a twofold-orbital degenerate Hubbard model with inverted Hund's rules on-site exchange,…

强关联电子 · 物理学 2007-08-07 M. Capone , M. Fabrizio , C. Castellani , E. Tosatti

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

The guiding conception of vortex-condensation-driven Mott insulating behavior is central to the theory of the nodal liquid. We amplify our earlier description of this idea and show how vortex condensation in 2D electronic systems is a…

强关联电子 · 物理学 2009-10-31 Leon Balents , Matthew Fisher , Chetan Nayak

We present a microscopic model for `electron doped' $Nd_{2-x}Ce_xCuO_4$ family and offer a resolution to a long standing doping asymmetry puzzle. Here, i) Ce atoms do not dope free electrons, instead a Ce atom effectively quenches a…

强关联电子 · 物理学 2007-05-23 G. Baskaran

Cuprate superconductors have many different atoms per unit cell. A large fraction of cells (5-25%) must be modified ("doped") before the material superconducts. Thus it is not surprising that there is little consensus on the superconducting…

超导电性 · 物理学 2013-07-10 Jamil Tahir-Kheli

We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the…

强关联电子 · 物理学 2009-11-13 Shiro Sakai , Yukitoshi Motome , Masatoshi Imada

We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral…

强关联电子 · 物理学 2009-11-11 Tiago C. Ribeiro , Alexander Seidel , Jung Hoon Han , Dung-Hai Lee