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相关论文: Inhomogeneity in doped Mott insulator

200 篇论文

We focus on very general, very large U, doped Mott Insulators with arbitrary hopping and interactions. We provide simple testimony to the competition between magnetic and superconducting orders in these systems. By mapping hard core bosons,…

强关联电子 · 物理学 2007-05-23 Marco Bosch , Zohar Nussinov

Using Mott insulators as a prototypical example, we demonstrate a dynamics-based characterization of quantum phases of matter through a general N-body renormalization group framework. The essential "Mott-ness" turns out to be characterized…

强关联电子 · 物理学 2025-10-17 Matheus de Sousa , Zhiyu Fan , Wei Ku

We study the doping-driven Mott metal-insulator transition for multi-orbital Hubbard models with Hund's exchange coupling at finite temperatures. As in the single-orbital Hubbard model, the transition is of first-order within dynamical mean…

强关联电子 · 物理学 2019-08-05 Jakob Steinbauer , Luca de' Medici , Silke Biermann

We show that doping of hole charge carriers leads to formation of electric dipolar clusters in cuprates. They are created by many-body interactions between the dopant ion outside and holes inside the CuO planes. Because of the two-fold…

强关联电子 · 物理学 2017-03-08 Mikko Saarela , F. V. Kusmartsev

Doped cuprates are inhomogeneous superconductors. The concept of an intrinsic critical temperature, Tcintr.$\equiv$ Tc*, whose value greatly exceeds that for the resistive Tcres.$\equiv$ Tc, is supported by a number of experimental studies,…

超导电性 · 物理学 2011-09-05 Vladimir Z. Kresin , Stuart A. Wolf

The electronic structure of Mott insulators continues to be a major unsolved problem in physics despite more than half-century of intense research efforts. Well-developed momentum-resolved spectroscopies such as photoemission or neutron…

强关联电子 · 物理学 2009-11-07 M. Z. Hasan , E. D. Isaacs , Z-X. Shen , L. L. Miller , K. Tsutsui , T. Tohyama , S. Maekawa

A topological insulator doped with random magnetic impurities is studied. The system is modelled by the Kane-Mele model with a random spin exchange between conduction electrons and magnetic dopants. The dynamical mean field theory for…

强关联电子 · 物理学 2020-11-25 Thanh-Mai Thi Tran , Duc-Anh Le , Tuan-Minh Pham , Kim-Thanh Thi Nguyen , Minh-Tien Tran

We present a general framework for describing the quantum phases obtained by doping paramagnetic Mott insulators on the square lattice. The undoped insulators are efficiently characterized by the projective transformations of various fields…

强关联电子 · 物理学 2008-11-26 Leon Balents , Subir Sachdev

Before Vic Emery's untimely death, we had the privilege of working closely with him on the role of Coulomb frustrated phase separation in doped Mott insulators, and on the consequences of the resulting local electronic structures on the…

超导电性 · 物理学 2009-12-14 Steven A. Kivelson , Eduardo Fradkin

We investigate the properties of the metallic state obtained by photo-doping carriers into a Mott insulator. In a strongly interacting system, these carriers have a long life-time, so that they can dissipate their kinetic energy to a phonon…

强关联电子 · 物理学 2013-03-21 Martin Eckstein , Philipp Werner

The doping dependence of the superfluid density $\rho_{\text{s}}$ exhibits distinct behaviors in the underdoping and overdoping regimes of the cuprate, while the superconducting (SC) transition temperature $T_c$ generally scales with…

强关联电子 · 物理学 2025-12-25 Zeyu Han , Zhi-Jian Song , Jia-Xin Zhang , Zheng-Yu Weng

Second-order topological insulators and superconductors have a gapped excitation spectrum in bulk and along boundaries, but protected zero modes at corners of a two-dimensional crystal or protected gapless modes at hinges of a…

介观与纳米尺度物理 · 物理学 2018-07-05 Max Geier , Luka Trifunovic , Max Hoskam , Piet W. Brouwer

We report the first measurement of collective charge modes of insulating Sr14Cu24O41 using inelastic resonant x-ray scattering over the complete Brillouin zone. Our results show that the intense excitation modes at the charge gap edge…

强关联电子 · 物理学 2008-01-10 L. Wray , D. Qian , D. Hsieh , Y. Xia , H. Eisaki , M. Z. Hasan

Tailoring transport properties of strongly correlated electron systems in a controlled fashion counts among the dreams of materials scientists. In copper oxides, varying the carrier concentration is a tool to obtain high-temperature…

Dynamic Hubbard models are extensions of the conventional Hubbard model that take into account the fact that atomic orbitals expand upon double occupancy. It is shown here that systems described by dynamic Hubbard models have a tendency to…

强关联电子 · 物理学 2013-07-25 J. E. Hirsch

A theory for the Hubbard model appropriate in the limit of large U/t, small doping away from half-filling and short-ranged antiferromagnetic spin correlations is presented. Despite the absence of any broken symmetry the Fermi surface takes…

强关联电子 · 物理学 2015-05-19 R. Eder , P. Wrobel , Y. Ohta

Based on an effective model of a doped antiferromagnetic Mott insulator, we show that a doped hole will induce a dipole-like spin configuration in a spin ordered phase at low doping. The kinetic energy of doped holes is severely frustrated…

强关联电子 · 物理学 2007-05-23 Su-Peng Kou , Zheng-Yu Weng

We present a coherent scenario for the physics of cuprate superconductors, which is based on a charge-driven inhomogeneity, i.e. the ``stripe phase''. We show that spin and charge critical fluctuations near the stripe instability of…

超导电性 · 物理学 2009-10-31 S. Caprara , C. Castellani , C. Di Castro , M. Grilli , A. Perali

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

A heterostructure of a semi-infinite metal and a Mott insulator is considered. It is supposed that both materials have an identical lattice spacing and hopping integrals and differ in the Hubbard repulsion which is negligible in the metal…

强关联电子 · 物理学 2015-05-13 A. Sherman , N. Voropajeva